SCHEMBL14749014

SCHEMBL14749014

O=C1OC(c2cccc3c(O)cccc23)(c2cccc3c(O)cccc23)c2ccccc21

nearest known ligand 0.70

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GNG2 P59768 1/20 0.56
GNB1 P62873 1/20 0.56
MAPT P10636 5/20 0.55
LMNA P02545 5/20 0.55
MEN1 O00255 4/20 0.55
KMT2A Q03164 4/20 0.55
TDP1 Q9NUW8 4/20 0.55
GPR55 Q9Y2T6 2/20 0.55
SMN1; SMN2 Q16637 2/20 0.55
TP53 P04637 2/20 0.55
CYP3A4 P08684 2/20 0.55
ALOX15 P16050 2/20 0.55
ALDH1A1 P00352 1/20 0.55
ESR1 P03372 1/20 0.55
TYMS P04818 1/20 0.55
TSHR P16473 1/20 0.55
ESR2 Q92731 1/20 0.55
HSD17B10 Q99714 1/20 0.55
CFTR P13569 1/20 0.53
GOPC Q9HD26 1/20 0.53

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29381676 0.94 GNG2 (0.64) GNG2GNB1MAPTLMNAMEN1
SCHEMBL63922 0.94 GNG2 (0.64) GNG2GNB1MAPTLMNAMEN1
SCHEMBL20194305 0.90 GNG2 (0.57) GNG2GNB1MAPTLMNAMEN1
SCHEMBL14749050 0.86 GNG2 (0.59) GNG2GNB1MAPTLMNAMEN1
SCHEMBL14749015 0.85 GNG2 (0.58) GNG2GNB1MAPTLMNAMEN1
SCHEMBL6526046 0.84 GNG2 (0.64) GNG2GNB1MAPTLMNAMEN1
SCHEMBL16305290 0.81 GNG2 (0.54) GNG2GNB1MAPTLMNAMEN1
SCHEMBL20194307 0.81 GNG2 (0.51) GNG2GNB1MAPTLMNAMEN1
SCHEMBL14749082 0.81 MAPT (0.64) GNG2GNB1MAPTLMNAMEN1
SCHEMBL14749055 0.80 FTO (0.56) GNG2GNB1MAPTLMNAMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2813890-B1 Photoresist underlayer film-forming composition and pattern forming processes SHINETSU CHEMICAL CO (JP) 2018-05-30 EP disclosed
US-9136122-B2 Underlayer film-forming composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-15 US disclosed
US-9136122-B2 Underlayer film-forming composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-15 US disclosed
EP-2813890-A2 Photoresist underlayer film-forming composition and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2014-12-17 EP disclosed
US-20140363958-A1 UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-20140363958-A1 UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-8574816-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-05 US disclosed
US-20130056653-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-07 US disclosed
US-20130056653-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-07 US disclosed