SCHEMBL1477027

SCHEMBL1477027

CC=COCC(CO)(COC=CC)COC=CC

nearest known ligand 0.37

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.37
TP53 P04637 1/20 0.37
CYP3A4 P08684 1/20 0.37
MAPK1 P28482 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
HIF1A Q16665 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1476332 0.95 ALDH1A1 (0.32) ALDH1A1TP53CYP3A4MAPK1SMN1; SMN2
SCHEMBL16626031 0.95 ALDH1A1 (0.32) ALDH1A1TP53CYP3A4MAPK1SMN1; SMN2
SCHEMBL8056794 0.88
SCHEMBL1476763 0.83
SCHEMBL27728295 0.78
SCHEMBL1476331 0.76 ALDH1A1 (0.30) ALDH1A1
SCHEMBL1476790 0.76 THRB (0.31)
SCHEMBL1476334 0.76 ALDH1A1 (0.30) ALDH1A1
SCHEMBL10070949 0.72
SCHEMBL1476610 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2813892-B1 Photoresist underlayer film-forming composition and pattern forming processes SHINETSU CHEMICAL CO (JP) 2020-06-17 EP disclosed
US-10228621-B2 Underlayer film-forming composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-03-12 US disclosed
US-10156788-B2 Resist underlayer film composition, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-12-18 US disclosed
EP-2813890-B1 Photoresist underlayer film-forming composition and pattern forming processes SHINETSU CHEMICAL CO (JP) 2018-05-30 EP disclosed
US-9984878-B2 Resist under layer film composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-29 US disclosed
US-9899218-B2 Resist under layer film composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-20 US disclosed
EP-2813889-B1 Photoresist underlayer film-forming composition and pattern forming process SHINETSU CHEMICAL CO (JP) 2018-02-07 EP disclosed
EP-2813891-B1 Photoresist underlayer film-forming composition and pattern forming process SHINETSU CHEMICAL CO (JP) 2018-01-17 EP disclosed
US-9620363-B2 Underlayer film-forming composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-11 US disclosed
US-20170018436-A1 RESIST UNDERLAYER FILM COMPOSTION, PATTERNING PROCESS, AND COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-19 US disclosed
EP-2813889-A2 Photoresist underlayer film-forming composition and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2014-12-17 EP disclosed
EP-2813892-A2 Photoresist underlayer film-forming composition and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2014-12-17 EP disclosed
EP-2813891-A2 Photoresist underlayer film-forming composition and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2014-12-17 EP disclosed
US-20140363957-A1 UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-20140363955-A1 UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-20140363958-A1 UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-20140363956-A1 UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-7915524-B2 Sealing agent for photoelectric conversion device and photoelectric conversion device using the same NIPPON KAYAKU KABUSHIKI KAISHA (JP) 2011-03-29 US disclosed
US-20060162771-A1 Sealing agent for photoelectric conversion element and photoelectric conversion device element using the same NIPPON KAYAKU KABUSHIKI KAISHA (JP) 2006-07-27 US disclosed
EP-1598897-A1 SEALING AGENT FOR PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT USING THE SAME Nippon Kayaku Kabushiki Kaisha (JP) 2005-11-23 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10156788-B2 Resist underlayer film composition, patterning process, and compound PARG, INTS9, PRDM9 ALDH1A1 4445/4885TP53 2971/4885CYP3A4 2832/4885
US-20170018436-A1 RESIST UNDERLAYER FILM COMPOSTION, PATTERNING PROCESS, AND COMPOUND PARG, INTS9, FRG1 ALDH1A1 4579/4885TP53 1454/4885CYP3A4 2142/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.