SCHEMBL14827366

SCHEMBL14827366

C=C(C)C(=O)OC(C)(c1ccc(C)cc1)C1CC1

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
GPR119 Q8TDV5 1/20 0.34
KMT2A Q03164 2/20 0.34
MAPT P10636 2/20 0.33
NPC1 O15118 2/20 0.33
RAB9A P51151 2/20 0.33
TSHR P16473 1/20 0.32
XBP1 P17861 1/20 0.32
HTT P42858 1/20 0.32
PAX8 Q06710 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
HPGD P15428 3/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2C19 P33261 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
LMNA P02545 1/20 0.32
KDM4E B2RXH2 1/20 0.32
RIPK1 Q13546 1/20 0.31
SLC6A2 P23975 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14827370 0.94 RAB9A (0.36) CA1CA2GPR119KMT2AMAPT
SCHEMBL14827360 0.94 RAB9A (0.33) CA1CA2GPR119KMT2AMAPT
SCHEMBL14827365 0.93 RAB9A (0.38) CA1CA2KMT2AMAPTNPC1
SCHEMBL14827344 0.87 MEN1 (0.36) KMT2AMAPTNPC1RAB9ATSHR
SCHEMBL14828489 0.87 BACE1 (0.35) CA1CA2MAPTHTTKDM4E
SCHEMBL14827350 0.82 NPC1 (0.35) KMT2AMAPTNPC1RAB9AXBP1
SCHEMBL14827346 0.82 MEN1 (0.34) KMT2AMAPTNPC1RAB9AXBP1
SCHEMBL14828486 0.82 HSD11B1 (0.38) KMT2AMAPTTSHRKDM4E
SCHEMBL14828483 0.82 CCR1 (0.39) MAPTKDM4ESLC6A2
SCHEMBL14827358 0.81 NPC1 (0.38) KMT2AMAPTNPC1RAB9AXBP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20160048076-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-18 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9140988-B2 Positive resist composition, monomer, polymer, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-22 US disclosed
US-9040223-B2 Resist composition, patterning process and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-20140178820-A1 RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140162188-A1 POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-12 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed