Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 3/20 | 0.41 |
| ▸ | NPC1 | O15118 | 1/20 | 0.41 |
| ▸ | RAB9A | P51151 | 1/20 | 0.41 |
| ▸ | HPGD | P15428 | 2/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.34 |
| ▸ | THRB | P10828 | 1/20 | 0.34 |
| ▸ | LMNA | P02545 | 2/20 | 0.33 |
| ▸ | HTT | P42858 | 2/20 | 0.33 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.33 |
| ▸ | XBP1 | P17861 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | PAX8 | Q06710 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 1/20 | 0.33 |
| ▸ | CA2 | P00918 | 1/20 | 0.33 |
| ▸ | CES2 | O00748 | 2/20 | 0.33 |
| ▸ | CES1 | P23141 | 2/20 | 0.33 |
| ▸ | ACHE | P22303 | 1/20 | 0.33 |
| ▸ | VDR | P11473 | 1/20 | 0.33 |
| ▸ | GAA | P10253 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14828592 | 0.88 | NPSR1 (0.40) | MAPTLMNAHTTNPSR1KMT2A | |
| SCHEMBL14827342 | 0.88 | KDM4E (0.38) | MAPTNPC1RAB9AHPGDTHRB | |
| SCHEMBL24110667 | 0.86 | THRB (0.33) | NPC1RAB9ATHRB | |
| SCHEMBL13347381 | 0.86 | CYP2C19 (0.43) | MAPTTHRBKMT2A | |
| SCHEMBL14827339 | 0.83 | MAPT (0.36) | MAPTNPC1RAB9AHPGDTSHR | |
| SCHEMBL15984205 | 0.80 | THRB (0.39) | THRBLMNAHTTKMT2ASMN1; SMN2 | |
| SCHEMBL14827345 | 0.80 | TSHR (0.39) | MAPTNPC1RAB9AHPGDTSHR | |
| SCHEMBL10958936 | 0.79 | NPC1 (0.45) | MAPTNPC1RAB9AHPGDTSHR | |
| SCHEMBL20507079 | 0.78 | LMNA (0.38) | MAPTNPC1RAB9AHPGDTSHR | |
| SCHEMBL26853260 | 0.78 | MAPT (0.44) | MAPTNPC1RAB9AHPGDTSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11815813-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-14 | — | — | US | disclosed |
| US-11815813-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-14 | — | — | US | disclosed |
| US-20210389672-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2021-12-16 | — | — | US | disclosed |
| US-20210389669-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2021-12-16 | — | — | US | disclosed |
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-20160048076-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-18 | — | — | US | disclosed |
| US-9201300-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-01 | — | — | US | disclosed |
| US-9140988-B2 | Positive resist composition, monomer, polymer, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-22 | — | — | US | disclosed |
| US-9040223-B2 | Resist composition, patterning process and polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-20140178820-A1 | RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140178818-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140162188-A1 | POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-12 | — | — | US | disclosed |
| US-20130084527-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20210389669-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | RER1, AFF1, AFF4 | MAPT 3833/4885NPC1 2284/4885RAB9A 1519/4885 |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | RER1, AFF1, AFF4 | MAPT 3833/4885NPC1 2284/4885RAB9A 1519/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.