SCHEMBL14828592

SCHEMBL14828592

C=C(C)C(=O)OC(C)(CC)c1ccc(C(F)(F)F)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.40
MAOB P27338 2/20 0.38
CES2 O00748 1/20 0.38
CES1 P23141 1/20 0.38
ALDH1A1 P00352 2/20 0.38
MAPT P10636 1/20 0.38
NR4A1 P22736 1/20 0.37
NR4A2 P43354 1/20 0.37
NR4A3 Q92570 1/20 0.37
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
LMNA P02545 1/20 0.37
HTT P42858 1/20 0.37
CYP1A2 P05177 1/20 0.37
CYP2C9 P11712 1/20 0.37
CYP2C19 P33261 1/20 0.37
PTPN1 P18031 1/20 0.37
GSK3B P49841 1/20 0.37
TRPV1 Q8NER1 1/20 0.36
MMP2 P08253 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14827348 0.88 MAPT (0.41) NPSR1CES2CES1MAPTKMT2A
SCHEMBL14827342 0.88 KDM4E (0.38) NPSR1ALDH1A1MAPTMEN1KMT2A
SCHEMBL24110667 0.86 THRB (0.33) CYP2C9TRPV1
SCHEMBL13347381 0.86 CYP2C19 (0.43) ALDH1A1MAPTKMT2ACYP1A2CYP2C19
SCHEMBL14828593 0.84 NPSR1 (0.40) NPSR1MAOBCES2CES1ALDH1A1
SCHEMBL25564028 0.83 CES2 (0.42) NPSR1MAOBCES2CES1ALDH1A1
SCHEMBL14827400 0.82 CES2 (0.41) MAOBCES2CES1ALDH1A1MAPT
SCHEMBL15984205 0.80 THRB (0.39) MAOBMEN1KMT2ALMNAHTT
SCHEMBL14828485 0.78 ALDH1A1 (0.44) MAOBCES2CES1ALDH1A1NR4A1
SCHEMBL24106308 0.77 ESR1 (0.36) NPSR1MEN1KMT2ALMNACYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20160048076-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-18 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9140988-B2 Positive resist composition, monomer, polymer, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-22 US disclosed
US-9040223-B2 Resist composition, patterning process and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-20140178820-A1 RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140162188-A1 POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-12 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed