SCHEMBL14828491

SCHEMBL14828491

C=C(C)C(=O)OC(c1ccc(C(F)(F)F)cc1)(C(C)C)C(C)C

nearest known ligand 0.40

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CES2 O00748 2/20 0.39
CES1 P23141 2/20 0.39
NR4A1 P22736 1/20 0.38
NR4A2 P43354 1/20 0.38
NR4A3 Q92570 1/20 0.38
GSK3B P49841 1/20 0.38
MAOB P27338 1/20 0.36
EPHX2 P34913 1/20 0.36
ALDH1A1 P00352 3/20 0.35
BACE1 P56817 1/20 0.35
MAPT P10636 1/20 0.35
SRD5A2 P31213 1/20 0.35
KIF11 P52732 1/20 0.35
TGM2 P21980 1/20 0.35
KDM4E B2RXH2 1/20 0.35
USP2 O75604 1/20 0.35
HPGD P15428 1/20 0.35
CYP2C19 P33261 1/20 0.35
HSD17B10 Q99714 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14827331 0.87 KCNN4 (0.37) ALDH1A1MAPTHPGD
SCHEMBL14827364 0.85 LMNA (0.35) CES2CES1ALDH1A1MAPTKIF11
SCHEMBL14827400 0.80 CES2 (0.41) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14828592 0.76 NPSR1 (0.40) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14828485 0.76 ALDH1A1 (0.44) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL26816132 0.76 CES2 (0.41) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14828593 0.76 NPSR1 (0.40) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14828589 0.76 CES2 (0.35) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14828586 0.75 NR4A1 (0.40) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14536591 0.75 ELANE (0.54) CES2CES1NR4A1NR4A2NR4A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20160048076-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-18 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9140988-B2 Positive resist composition, monomer, polymer, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-22 US disclosed
US-9040223-B2 Resist composition, patterning process and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140178820-A1 RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140162188-A1 POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-12 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed