Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NQO2 | P16083 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 4/20 | 0.42 |
| ▸ | NPSR1 | Q6W5P4 | 3/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.42 |
| ▸ | HPGD | P15428 | 2/20 | 0.42 |
| ▸ | TSHR | P16473 | 2/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.42 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.42 |
| ▸ | APEX1 | P27695 | 1/20 | 0.42 |
| ▸ | BLM | P54132 | 1/20 | 0.42 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.42 |
| ▸ | PDE4A | P27815 | 1/20 | 0.42 |
| ▸ | PDE4B | Q07343 | 1/20 | 0.42 |
| ▸ | PDE4C | Q08493 | 1/20 | 0.42 |
| ▸ | PDE4D | Q08499 | 1/20 | 0.42 |
| ▸ | CES2 | O00748 | 1/20 | 0.42 |
| ▸ | CES1 | P23141 | 1/20 | 0.42 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL36568 | 1.00 | NQO2 (0.43) | NQO2MAPTNPSR1ALDH1A1KDM4E | |
| SCHEMBL18431381 | 0.90 | PLA2G7 (0.36) | MAPTNPC1HSD17B10 | |
| SCHEMBL9891196 | 0.90 | PLA2G7 (0.36) | MAPTNPC1HSD17B10 | |
| SCHEMBL19418706 | 0.90 | PLA2G7 (0.36) | MAPTNPC1HSD17B10 | |
| SCHEMBL3758320 | 0.88 | NQO2 (0.41) | NQO2MAPTNPSR1ALDH1A1KDM4E | |
| SCHEMBL12459983 | 0.88 | STS (0.47) | NQO2MAPTNPSR1ALDH1A1KDM4E | |
| SCHEMBL36535 | 0.87 | NQO2 (0.40) | NQO2MAPTNPSR1ALDH1A1KDM4E | |
| SCHEMBL5918260 | 0.87 | EP300 (0.45) | NQO2MAPTNPSR1ALDH1A1KDM4E | |
| SCHEMBL297395 | 0.87 | NQO2 (0.40) | NQO2MAPTNPSR1ALDH1A1KDM4E | |
| SCHEMBL5918261 | 0.87 | EP300 (0.45) | NQO2MAPTNPSR1ALDH1A1KDM4E |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1480 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0780729-B1 | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO LTD (JP) | 2002-07-10 | — | — | EP | claimed |
| EP-0925529-A1 | ALKYSULFONYLOXIMES FOR HIGH-RESOLUTION I-LINE PHOTORESISTS OF HIGH SENSITIVITY | Ciba SC Holding AG (CH) | 1999-06-30 | — | — | EP | claimed |
| US-5902713-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-05-11 | — | — | US | claimed |
| WO-1998010335-A1 | ALKYSULFONYLOXIMES FOR HIGH-RESOLUTION I-LINE PHOTORESISTS OF HIGH SENSITIVITY | CIBA SPECIALTY CHEMICALS HOLDING INC. (CH) | 1998-03-12 | — | — | WO | claimed |
| EP-0780729-A1 | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1997-06-25 | — | — | EP | claimed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| CN-117769684-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2024-03-26 | — | — | CN | disclosed |
| CN-117716290-A | Resist composition and method for forming resist film using the same | 三菱瓦斯化学株式会社 | 2024-03-15 | — | — | CN | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230287179-A1 | HIGHLY SOLUBLE TRIS-(2,3-EPOXYPROPYL)-ISOCYANURATE AND METHOD FOR PRODUCING SAME | NISSAN CHEMICAL CORPORATION (JP) | 2023-09-14 | — | — | US | disclosed |
| US-6022666-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-02-08 | — | — | US | disclosed |
| US-6022666-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-02-08 | — | — | US | disclosed |
| EP-0925529-A1 | ALKYSULFONYLOXIMES FOR HIGH-RESOLUTION I-LINE PHOTORESISTS OF HIGH SENSITIVITY | Ciba SC Holding AG (CH) | 1999-06-30 | — | — | EP | disclosed |
| US-5902713-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-05-11 | — | — | US | disclosed |
| US-5902713-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-05-11 | — | — | US | disclosed |
| WO-1998010335-A1 | ALKYSULFONYLOXIMES FOR HIGH-RESOLUTION I-LINE PHOTORESISTS OF HIGH SENSITIVITY | CIBA SPECIALTY CHEMICALS HOLDING INC. (CH) | 1998-03-12 | — | — | WO | disclosed |
| EP-0780729-A1 | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1997-06-25 | — | — | EP | disclosed |
| EP-0780729-A1 | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1997-06-25 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | NQO2 3077/4885MAPT 1634/4885NPSR1 4485/4885 |
| US-20230287179-A1 | HIGHLY SOLUBLE TRIS-(2,3-EPOXYPROPYL)-ISOCYANURATE AND METHOD FOR PRODUCING SAME | TTPA, USP1, USP2 | NQO2 3397/4885MAPT 70/4885NPSR1 4608/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.