SCHEMBL157395

SCHEMBL157395

COC(C)(C)CCCCC(=O)O

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.48
LMNA P02545 2/20 0.48
TSHR P16473 6/20 0.46
NFKB1 P19838 1/20 0.46
PMP22 Q01453 1/20 0.46
AKR1B1 P15121 1/20 0.44
GPR84 Q9NQS5 7/20 0.43
PPARG P37231 7/20 0.43
PPARD Q03181 7/20 0.43
PPARA Q07869 7/20 0.43
HDAC11 Q96DB2 5/20 0.43
PTPN1 P18031 3/20 0.43
TLR2 O60603 2/20 0.43
TDP1 Q9NUW8 2/20 0.43
FABP4 P15090 2/20 0.43
SLC22A6 Q4U2R8 2/20 0.43
SLC22A8 Q8TCC7 1/20 0.43
MEN1 O00255 1/20 0.43
ESR1 P03372 1/20 0.43
ALOX15 P16050 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL986920 0.98 ALDH1A1 (0.52) ALDH1A1LMNATSHRNFKB1PMP22
SCHEMBL984967 0.93 TSHR (0.46) ALDH1A1LMNATSHRNFKB1PMP22
SCHEMBL12410508 0.84 NAALAD2 (0.43) ALDH1A1LMNATSHRNFKB1PMP22
SCHEMBL21933577 0.83 ALDH1A1 (0.41) ALDH1A1LMNATSHRNFKB1PMP22
SCHEMBL30955715 0.81 AKR1B1 (0.41) ALDH1A1TSHRAKR1B1GPR84PPARG
SCHEMBL29807574 0.80 ALDH1A1 (0.39) ALDH1A1LMNATSHRNFKB1PMP22
SCHEMBL29639025 0.79 TDP1 (0.36) ALDH1A1LMNATSHRTDP1KMT2A
SCHEMBL21560981 0.79 LMNA (0.44) ALDH1A1LMNATSHRNFKB1PMP22
SCHEMBL19333419 0.78 TSHR (0.46) ALDH1A1LMNATSHRNFKB1PMP22
SCHEMBL27334341 0.78 NFKB1 (0.45) ALDH1A1LMNATSHRNFKB1PMP22

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 313 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
JP-4804577-B2 2011-11-02 JP claimed
US-20100085518-A1 PHOTO-SENSITIVE RESIN COMPOSITION FOR BLACK MATRIX, BLACK MATRIX PRODUCED BY THE COMPOSITION AND LIQUID CRYSTAL DISPLAY INCLUDING THE BLACK MATRIX LG CHEM, LTD. (KR) 2010-04-08 US claimed
WO-2008102990-A1 PHOTO-SENSITIVE RESIN COMPOSITION FOR BLACK MATRIX, BLACK MATRIX PRODUCED BY THE COMPOSITION AND LIQUID CRYSTAL DISPLAY INCLUDING THE BLACK MATRIX LG CHEM, LTD. (KR) 2008-08-28 WO claimed
WO-2008078953-A1 BLACK MATRIX HIGH SENSITIVE PHOTORESIST COMPOSITION FOR LIQUID CRYSTAL DISPLAY AND BLACK MATRIX PREPARED BY USING THE SAME LG CHEM, LTD. (KR) 2008-07-03 WO claimed
CN-122094772-A Method for producing laminated film, and method for separating CO2 2026-05-26 CN disclosed
CN-122094826-A Method for producing laminate and method for separating CO2 2026-05-26 CN disclosed
EP-4621487-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING CURCUMIN DERIVATIVE Nissan Chemical Corporation (JP) 2025-09-24 EP disclosed
WO-2025120878-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE COLORING COMPOSITION, AND COLOR FILTER 株式会社レゾナック 2025-06-12 WO disclosed
WO-2025121031-A1 COPOLYMER 株式会社レゾナック 2025-06-12 WO disclosed
WO-2025121034-A1 RESIN COMPOSITION, MODIFIED RESIN COMPOSITION, AND METHOD FOR PRODUCING MODIFIED RESIN COMPOSITION 株式会社レゾナック 2025-06-12 WO disclosed
WO-2025121033-A1 METHOD FOR PRODUCING COPOLYMER 株式会社レゾナック 2025-06-12 WO disclosed
WO-2025121032-A1 RESIN COMPOSITION, MODIFIED RESIN COMPOSITION, AND METHOD FOR PRODUCING MODIFIED RESIN COMPOSITION 株式会社レゾナック 2025-06-12 WO disclosed
US-20010041769-A1 Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition JSR CORPORATION (JP) 2001-11-15 US disclosed
EP-1142928-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR Corporation (JP) 2001-10-10 EP disclosed
EP-0634696-B2 Chemically amplified resist composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 2001-01-31 EP disclosed
US-6114086-A COMPRISING ALKALI-SOLUBLE RESIN, DISSOLUTION CONTROLLING AGENTS, PHOTOACID GENERATOR, SOLVENT; USED FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES OR INTEGRATED CIRCUITS JSR CORPORATION (JP) 2000-09-05 US disclosed
US-5916729-A A POSITIVE TONE TYPE REISTS CONSISTS OF A RESIN WHICH HAS AN ACIDIC FUNCTIONAL GROUP PROTECTED BY AN ACID DECOMPOSABLE GROUP AND IS HYDROLYZABLE, A PHOTOACID GENERATOR AND A SOLVENT MIXTURE OF ALKYL LACTATE WITH PROPYLENE GLYCOL ETHER JSR CORPORATION (JP) 1999-06-29 US disclosed
EP-0634696-B1 Chemically amplified resist composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1998-01-14 EP disclosed
US-5629135-A ALKALI-SOLUBLE RESIN, CROSSLINKER, PHOTOACID GENERATOR, SOLVENT JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-05-13 US disclosed
EP-0634696-A1 Chemically amplified resist composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1995-01-18 EP disclosed