SCHEMBL15907714

SCHEMBL15907714

C=Cc1ccccc1COC(=O)C(O)C(F)(F)F

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TGM2 P21980 2/20 0.34
CYP3A4 P08684 1/20 0.32
RAB9A P51151 3/20 0.31
NPC1 O15118 2/20 0.31
SMN1; SMN2 Q16637 2/20 0.31
LMNA P02545 1/20 0.31
MAPT P10636 1/20 0.31
HTT P42858 1/20 0.31
PPARG P37231 1/20 0.31
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30
F13A1 P00488 1/20 0.30
TGM1 P22735 1/20 0.30
NFKB1 P19838 1/20 0.30
POLB P06746 1/20 0.30
TSHR P16473 1/20 0.30
MAPK1 P28482 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30
TACR1 P25103 1/20 0.30
MAOB P27338 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18360619 0.81 ADRB2 (0.34) TGM2CYP3A4RAB9ANPC1SMN1; SMN2
SCHEMBL19335426 0.79
SCHEMBL16687327 0.78 POLB (0.35) TGM2CYP3A4PPARGMEN1KMT2A
SCHEMBL61037 0.76 ALDH1A1 (0.50) CYP3A4RAB9ASMN1; SMN2LMNAMAPT
SCHEMBL2029842 0.76 THRB (0.46) CYP3A4SMN1; SMN2LMNAPPARGTSHR
SCHEMBL18309861 0.76 PDK1 (0.37) MEN1KMT2APOLBMAPK1MAOB
SCHEMBL28106174 0.76 ALDH1A1 (0.41) CYP3A4RAB9ANPC1MAPTKMT2A
SCHEMBL31670202 0.74 ALDH1A1 (0.52) SMN1; SMN2LMNAMEN1KMT2AMAPK1
SCHEMBL20830529 0.74 ALDH1A1 (0.52) SMN1; SMN2LMNAMEN1KMT2AMAPK1
SCHEMBL9344820 0.74 L3MBTL1 (0.38) TGM2MAPTHTTTSHRL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-20170003590-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-05 US disclosed
US-20160363866-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-15 US disclosed
US-20160363866-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-15 US disclosed
US-9023587-B2 Negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-05 US disclosed
US-9023587-B2 Negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-05 US disclosed
US-20140212810-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-31 US disclosed