SCHEMBL1593376

SCHEMBL1593376

O=S(=O)(OSC(c1ccccc1)c1ccccc1)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 2/20 0.34
ALDH1A1 P00352 2/20 0.34
KMT2A Q03164 2/20 0.34
MAPT P10636 1/20 0.34
HTT P42858 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA5A P35218 1/20 0.33
CA9 Q16790 1/20 0.33
CYP2D6 P10635 2/20 0.32
SLC6A3 Q01959 2/20 0.32
CYP1A2 P05177 1/20 0.32
CYP3A4 P08684 1/20 0.32
CYP2C9 P11712 1/20 0.32
TSHR P16473 1/20 0.32
SLC6A4 P31645 1/20 0.32
CYP2C19 P33261 1/20 0.32
SRC P12931 1/20 0.32
CXCR2 P25025 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1593673 0.85 CA1 (0.33) ALDH1A1CA1CA2CYP2D6SLC6A3
SCHEMBL1593152 0.84 CA1 (0.37) ALDH1A1CA1CA2CYP2D6SLC6A3
SCHEMBL9861793 0.77 SRC (0.42) MAPK1ALDH1A1KMT2AMAPTNPSR1
SCHEMBL3104593 0.75 ALDH1A1 (0.35) MAPK1ALDH1A1KMT2AMAPTHTT
SCHEMBL3374912 0.71 CA2 (0.36) MAPK1ALDH1A1MAPTCA1CA2
SCHEMBL29856072 0.71 IDO1 (0.40) MAPK1ALDH1A1KMT2AMAPTHTT
Ammonia Solution, Strong SCHEMBL29119872 0.69 IDO1 (0.39) MAPK1ALDH1A1KMT2AMAPTHTT
SCHEMBL2874877 0.68 TSHR (0.43) CYP2D6SLC6A3CYP1A2CYP3A4CYP2C9
SCHEMBL1273035 0.68 NPSR1 (0.39) MAPK1ALDH1A1KMT2AMAPTHTT
SCHEMBL13829003 0.68 HCAR2 (0.39) MAPK1ALDH1A1KMT2AMAPTHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2469337-B1 Positive photosensitive resin composition, method for forming pattern, and electronic component HITACHI CHEM DUPONT MICROSYS (JP) 2014-01-22 EP claimed
EP-2469337-A1 Positive photosensitive resin composition, method for forming pattern, and electronic component Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2012-06-27 EP claimed
EP-2469337-B1 Positive photosensitive resin composition, method for forming pattern, and electronic component HITACHI CHEM DUPONT MICROSYS (JP) 2014-01-22 EP disclosed
EP-2469337-A1 Positive photosensitive resin composition, method for forming pattern, and electronic component Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2012-06-27 EP disclosed
US-20110091818-A1 PROCESS FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-04-21 US disclosed
US-20100273112-A1 PROCESS FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-10-28 US disclosed
US-7638254-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD (JP) 2009-12-29 US disclosed
US-20090011364-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC PART HATTORI TAKASHI 2009-01-08 US disclosed
US-7435525-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2008-10-14 US disclosed
US-20070122733-A1 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2007-05-31 US disclosed
EP-1744213-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC COMPONENT Hitachi Chemical DuPont Microsystems Ltd. (JP) 2007-01-17 EP disclosed