Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.39 |
| ▸ | FAAH | O00519 | 1/20 | 0.35 |
| ▸ | PRSS1 | P07477 | 1/20 | 0.35 |
| ▸ | PRSS2 | P07478 | 1/20 | 0.35 |
| ▸ | ELANE | P08246 | 1/20 | 0.35 |
| ▸ | PRTN3 | P24158 | 1/20 | 0.35 |
| ▸ | PRSS3 | P35030 | 1/20 | 0.35 |
| ▸ | POLB | P06746 | 2/20 | 0.35 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.35 |
| ▸ | SNCA | P37840 | 1/20 | 0.33 |
| ▸ | SRC | P12931 | 1/20 | 0.32 |
| ▸ | HTR6 | P50406 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.32 |
| ▸ | MAPT | P10636 | 2/20 | 0.32 |
| ▸ | HPGD | P15428 | 2/20 | 0.32 |
| ▸ | GMNN | O75496 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL29834849 | 0.78 | GPR3 (0.50) | TSHRHTR6ALDH1A1CA2CA9 | |
| SCHEMBL8972780 | 0.74 | TSHR (0.39) | TSHRSMN1; SMN2FAAHPRSS1PRSS2 | |
| SCHEMBL2679092 | 0.74 | TSHR (0.39) | TSHRSMN1; SMN2FAAHPRSS1PRSS2 | |
| SCHEMBL978653 | 0.74 | TSHR (0.39) | TSHRSMN1; SMN2FAAHPRSS1PRSS2 | |
| SCHEMBL2435600 | 0.74 | TSHR (0.39) | TSHRSMN1; SMN2FAAHPRSS1PRSS2 | |
| SCHEMBL1093222 | 0.72 | ALDH1A1 (0.40) | TSHRSMN1; SMN2TDP1ALDH1A1MAPT | |
| Trifluoromethanesulfonic Acid SCHEMBL29834789 | 0.71 | GPR3 (0.43) | TSHRPOLBALDH1A1HPGDKMT2A | |
| Iodide SCHEMBL30468624 | 0.69 | APOBEC3A (0.40) | TSHRSMN1; SMN2TDP1ALDH1A1MAPT | |
| Hydrochloric Acid SCHEMBL1158021 | 0.69 | ALDH1A1 (0.38) | TSHRSMN1; SMN2TDP1ALDH1A1MAPT | |
| Benzene SCHEMBL2887752 | 0.69 | TSHR (0.73) | TSHRSMN1; SMN2FAAHPRSS1PRSS2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2138897-B1 | CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN | FUJITSU LTD (JP) | 2016-08-03 | — | — | EP | disclosed |
| US-8795951-B2 | Material for forming resist sensitization film and production method of semiconductor device | FUJITSU LIMITED (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8557144-B2 | Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head | FUJITSU LIMITED (JP) | 2013-10-15 | — | — | US | disclosed |
| US-20110081615-A1 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-04-07 | — | — | US | disclosed |
| US-20100009296-A1 | MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2138897-A1 | MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | Fujitsu Limited (JP) | 2009-12-30 | — | — | EP | disclosed |