SCHEMBL8972780

SCHEMBL8972780

O=S(=O)(O)F.O=S(=O)(O)F.O=S(=O)(O)F.O=S(=O)(O)F.O=S(=O)(O)F.O=S(=O)([O-])F.c1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
KDM4E B2RXH2 1/20 0.38
MAPT P10636 1/20 0.38
HPGD P15428 1/20 0.38
FAAH O00519 1/20 0.35
PRSS1 P07477 1/20 0.35
PRSS2 P07478 1/20 0.35
ELANE P08246 1/20 0.35
PRTN3 P24158 1/20 0.35
PRSS3 P35030 1/20 0.35
POLB P06746 1/20 0.35
CYP2D6 P10635 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
SNCA P37840 1/20 0.33
SRC P12931 1/20 0.32
HTR6 P50406 1/20 0.32
MMP2 P08253 2/20 0.32
CA2 P00918 4/20 0.31
CA12 O43570 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL978653 1.00 TSHR (0.39) TSHRSMN1; SMN2KDM4EMAPTHPGD
SCHEMBL11393462 0.93 FAAH (0.39) TSHRSMN1; SMN2KDM4EMAPTHPGD
Sulfuric Acid SCHEMBL1062108 0.89 TSHR (0.44) TSHRSMN1; SMN2KDM4EMAPTHPGD
Sulfuric Acid SCHEMBL1777697 0.84 HTR6 (0.39) TSHRSMN1; SMN2KDM4EMAPTHPGD
Sulfuric Acid SCHEMBL1780831 0.84 KDM4E (0.50) TSHRSMN1; SMN2KDM4EMAPTHPGD
SCHEMBL1628635 0.79 KEAP1 (0.39) HTR6MMP2CA2CA12CA9
SCHEMBL1718014 0.79 KEAP1 (0.44) TSHRSMN1; SMN2KDM4EMAPTHPGD
Anthraquinone SCHEMBL1405498 0.79 KMT2A (0.48) SMN1; SMN2KDM4EMAPTPOLBALDH1A1
Toliodium SCHEMBL8327648 0.79 TLR9 (0.42) SMN1; SMN2PRSS1PRSS2PRSS3POLB
Trifluoromethanesulfonic Acid SCHEMBL30407359 0.79 GPR3 (0.43) TSHRSMN1; SMN2KDM4EMAPTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2021256386-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE 日産化学株式会社 2021-12-23 WO disclosed
WO-2021241594-A1 VERTICALLY PHASE-SEPARATED BLOCK COPOLYMER LAYER 日産化学株式会社 2021-12-02 WO disclosed
WO-2021125036-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINTING 日産化学株式会社 2021-06-24 WO disclosed
WO-2021070775-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2021-04-15 WO disclosed
WO-2021015181-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION 日産化学株式会社 2021-01-28 WO disclosed
WO-2020255984-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM CAPABLE OF WET ETCHING, CONTAINING HETEROCYCLIC COMPOUND HAVING DICYANOSTYRYL GROUP 日産化学株式会社 2020-12-24 WO disclosed
WO-2020235427-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION 日産化学株式会社 (JP) 2020-11-26 WO disclosed
WO-2020196563-A1 FILM-FORMING COMPOSITION 日産化学株式会社 2020-10-01 WO disclosed
WO-2020184642-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2020-09-17 WO disclosed
EP-0540032-B1 Photoresist composition and etching method FUJI PHOTO FILM CO LTD (JP) 1996-03-06 EP disclosed