SCHEMBL1607966

SCHEMBL1607966

O=S(=O)(OCCOc1ccccc1)c1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNA3 P22001 1/20 0.50
PKM P14618 2/20 0.47
ALDH1A1 P00352 4/20 0.45
L3MBTL1 Q9Y468 1/20 0.45
TAAR1 Q96RJ0 1/20 0.45
RECQL P46063 1/20 0.45
HTR1A P08908 1/20 0.44
HTR7 P34969 1/20 0.44
PARP10 Q53GL7 1/20 0.44
CA12 O43570 2/20 0.44
CA1 P00915 2/20 0.44
CA9 Q16790 2/20 0.44
CA2 P00918 1/20 0.44
CA7 P43166 1/20 0.44
MEN1 O00255 1/20 0.43
HTT P42858 1/20 0.43
KMT2A Q03164 1/20 0.43
THRB P10828 1/20 0.42
MAPT P10636 1/20 0.42
RAB9A P51151 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4739840 0.91 KCNA3 (0.54) KCNA3ALDH1A1TAAR1RECQLHTR1A
SCHEMBL1395593 0.88 CA12 (0.55) PKMALDH1A1L3MBTL1CA12CA1
SCHEMBL3449015 0.88 PARL (0.50) ALDH1A1L3MBTL1CA12CA1CA9
SCHEMBL14324617 0.85 CA12 (0.43) PKMALDH1A1L3MBTL1HTR1AHTR7
SCHEMBL14323764 0.85 ALDH1A1 (0.45) PKMALDH1A1L3MBTL1CA12CA1
SCHEMBL1034686 0.85 ALDH1A1 (0.42) KCNA3PKMALDH1A1CA12CA1
SCHEMBL6914766 0.84 CA12 (0.52) PKMALDH1A1L3MBTL1CA12CA1
SCHEMBL9523402 0.83 HTT (0.60) L3MBTL1CA12CA1CA9HTT
SCHEMBL30011527 0.82 ALDH1A1 (0.50) ALDH1A1L3MBTL1CA12CA1CA9
SCHEMBL1607270 0.82 KCNA3 (0.56) KCNA3PKMALDH1A1TAAR1RECQL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8795951-B2 Material for forming resist sensitization film and production method of semiconductor device FUJITSU LIMITED (JP) 2014-08-05 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-8546299-B2 Color-developing composition and recording material containing the same NIPPON SODA CO., LTD. (JP) 2013-10-01 US disclosed
US-20110104619-A1 COLOR-DEVELOPING COMPOSITION AND RECORDING MATERIAL CONTAINING THE SAME NIPPON SODA CO., LTD. (JP) 2011-05-05 US disclosed
US-20110081615-A1 MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-04-07 US disclosed
CN-102007091-A Purification strategy for direct nucleophilic procedures BAYER SCHERING PHARMA AG 2011-04-06 CN disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed
US-20030224293-A1 Thin film comprising an organic compound dye that can form pits when irradiated with a semiconductor laser beam and an indole-2-vinylene metallocene compound ASAHI DENKA KOGYO KABUSHIKI KAISHA (JP) 2003-12-04 US disclosed
US-4341403-A Fluoran compounds, process for preparation thereof, and recording sheets using same FUJI PHOTO FILM CO., LTD. (JP) 1982-07-27 US disclosed