SCHEMBL1608650

SCHEMBL1608650

CCCCO[Si](C)(OC)OCC

nearest known ligand 0.33

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.33
ADRB1 P08588 1/20 0.33
ADRB3 P13945 1/20 0.33
CYP1A2 P05177 1/20 0.30
CYP2D6 P10635 1/20 0.30
CYP19A1 P11511 1/20 0.30
CYP2C9 P11712 1/20 0.30
CYP2C19 P33261 1/20 0.30
CYP3A4 P08684 1/20 0.30
TSHR P16473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8083875 0.93 ADRB2 (0.38) ADRB2ADRB1ADRB3CYP1A2CYP2D6
SCHEMBL837875 0.88 ADRB2 (0.38) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL1189490 0.88 ADRB2 (0.38) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL838422 0.88 ADRB2 (0.38) ADRB2ADRB1ADRB3CYP1A2CYP2D6
SCHEMBL1608005 0.86
SCHEMBL1608021 0.86 DNM1 (0.35) TSHR
SCHEMBL1062613 0.83
SCHEMBL6295813 0.81 DNM1 (0.35) TSHR
SCHEMBL6292792 0.81 CA1 (0.33) TSHR
SCHEMBL28130472 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 101 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
US-20230257503-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-17 US disclosed
EP-4212256-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE Mitsubishi Chemical Corporation (JP) 2023-07-19 EP disclosed
US-11542397-B2 Liquid composition, quantum dot-containing film, optical film, light-emitting display element panel, and light-emitting display device TOKYO OHKA KOGYO CO., LTD. (JP) 2023-01-03 US disclosed
US-11413682-B2 Method for producing surface-modified metal oxide fine particle, method for producing improved metal oxide fine particles, surface-modified metal oxide fine particles, and metal oxide fine particle dispersion liquid TOKYO OHKA KOGYO CO., LTD. (JP) 2022-08-16 US disclosed
US-20220220338-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR FORMING SILICON-CONTAINING POLYMER COATING, METHOD FOR FORMING SILICA COATING, AND PRODUCTION METHOD FOR SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-14 US disclosed
US-20220213348-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR SUPPORTING METAL COMPOUND ON SURFACE OF OBJECT TO BE TREATED, ARTICLE HAVING METAL COMPOUND-SUPPORTING COATING FILM, AND METHOD FOR PRODUCING SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-07 US disclosed
US-11377522-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica-based coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-05 US disclosed
EP-3971229-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR FORMING SILICON-CONTAINING POLYMER COATING, METHOD FOR FORMING SILICA COATING, AND PRODUCTION METHOD FOR SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-03-23 EP disclosed
WO-2022054912-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE 三菱ケミカル株式会社 2022-03-17 WO disclosed
US-20060141693-A1 Semiconductor multilayer interconnection forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2006-06-29 US disclosed
EP-1641908-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-05 EP disclosed
EP-1566836-A1 SEMICONDUCTOR MULTILAYER INTERCONNECTION FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2005-08-24 EP disclosed
US-20050112383-A1 Undercoating layer material for lithography and wiring forming method using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-05-26 US disclosed
US-20050074695-A1 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2005-04-07 US disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed