SCHEMBL1609515

SCHEMBL1609515

CCCCCO[Si](CCC)(OCCCCC)OCCCCC

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LPAR3 Q9UBY5 6/20 0.38
LPAR2 Q9HBW0 5/20 0.38
THRB P10828 2/20 0.35
TSHR P16473 1/20 0.35
CA1 P00915 8/20 0.34
CA2 P00918 8/20 0.34
CA9 Q16790 8/20 0.34
CA12 O43570 3/20 0.34
MEN1 O00255 1/20 0.34
HTT P42858 1/20 0.34
KMT2A Q03164 1/20 0.34
MAPT P10636 1/20 0.34
LPAR1 Q92633 2/20 0.33
CA3 P07451 2/20 0.33
CA4 P22748 2/20 0.33
CA6 P23280 2/20 0.33
CA5A P35218 2/20 0.33
CA7 P43166 2/20 0.33
CA14 Q9ULX7 2/20 0.33
CA5B Q9Y2D0 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6652565 0.97 LPAR3 (0.41) LPAR3LPAR2THRBTSHRCA1
SCHEMBL6651727 0.97 LPAR3 (0.41) LPAR3LPAR2THRBTSHRCA1
SCHEMBL27678082 0.93 LPAR3 (0.34) LPAR3LPAR2THRBTSHRCA1
SCHEMBL149408 0.92 ADRB2 (0.39) LPAR3LPAR2THRBTSHRCA1
SCHEMBL23493367 0.90 LPAR3 (0.43) LPAR3LPAR2THRBTSHRCA1
SCHEMBL1607986 0.90 LPAR3 (0.38) LPAR3LPAR2THRBTSHRCA1
Ammonia Solution, Strong SCHEMBL28431140 0.90 ADRB2 (0.38) TSHRCA1CA2LMNA
SCHEMBL4809082 0.90 LPAR3 (0.38) LPAR3LPAR2THRBTSHRCA1
SCHEMBL1609584 0.88 LMNA (0.42) LPAR3LPAR2THRBTSHRCA1
SCHEMBL9009701 0.87 LPAR3 (0.41) LPAR3LPAR2THRBTSHRCA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 98 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4163342-B1 AQUEOUS INK, INK CARTRIDGE, INK JET RECORDING METHOD, TITANIUM OXIDE PARTICLE DISPERSION, METHOD FOR PRODUCING TITANIUM OXIDE PARTICLE DISPERSION AND METHOD FOR PRODUCING AQUEOUS INK CANON KK (JP) 2025-11-26 EP disclosed
US-20250066242-A1 AN ARTICLE HAVING ANTI-CONTAMINATION SURFACE AND A METHOD FOR FORMING ANTI-CONTAMINATION SURFACE LG CHEM, LTD. (KR) 2025-02-27 US disclosed
EP-4484505-A1 PRODUCT HAVING ANTI-FOULING SURFACE, AND METHOD FOR FORMING ANTI-FOULING SURFACE LG Chem, Ltd. (KR) 2025-01-01 EP disclosed
US-20240392142-A1 ARTICLE FOR ANTIFOULING LG CHEM, LTD. (KR) 2024-11-28 US disclosed
CN-119013357-A Article having a contamination-resistant surface and method for forming a contamination-resistant surface 株式会社LG化学 2024-11-22 CN disclosed
EP-4421134-A1 ANTIFOULING ARTICLE LG Chem, Ltd. (KR) 2024-08-28 EP disclosed
CN-118265755-A Product for scale prevention 株式会社LG化学 2024-06-28 CN disclosed
CN-116075368-B Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2024-06-11 CN disclosed
WO-2024072004-A1 ANTIFOULING ARTICLE 주식회사 엘지화학 2024-04-04 WO disclosed
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
EP-2472655-A1 Negative electrode base member Tokyo Ohka Kogyo Co., Ltd. (JP) 2012-07-04 EP disclosed
US-20110079262-A1 DIFFUSING AGENT COMPOSITION, METHOD OF FORMING IMPURITY DIFFUSION LAYER, AND SOLAR BATTERY TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-07 US disclosed
US-20110017291-A1 DIFFUSING AGENT COMPOSITION FOR INK-JET, AND METHOD FOR PRODUCTION OF ELECTRODE OR SOLAR BATTERY USING THE COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2011-01-27 US disclosed
US-20100119939-A1 NEGATIVE ELECTRODE BASE MEMBER TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-13 US disclosed
EP-2131423-A1 NEGATIVE ELECTRODE BASE MEMBER Tokyo Ohka Kogyo Co., Ltd. (JP) 2009-12-09 EP disclosed
US-20080318165-A1 Composition For Forming Antireflective Film And Wiring Forming Method Using Same TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-25 US disclosed
US-7332446-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed
CN-1542071-A Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device ��Խ��ѧ��ҵ��ʽ���� 2004-11-03 CN disclosed
US-20040188809-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-30 US disclosed
EP-0126186-A1 Elastic moulding composition, method for its preparation and moulding, and its use Degussa Aktiengesellschaft (DE) 1984-11-28 EP disclosed