Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 3/20 | 0.53 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.53 |
| ▸ | CDC25B | P30305 | 1/20 | 0.53 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.52 |
| ▸ | MAPK1 | P28482 | 4/20 | 0.52 |
| ▸ | TP53 | P04637 | 4/20 | 0.52 |
| ▸ | CASP1 | P29466 | 3/20 | 0.52 |
| ▸ | CASP7 | P55210 | 3/20 | 0.52 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.52 |
| ▸ | TSHR | P16473 | 2/20 | 0.52 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.52 |
| ▸ | HPGD | P15428 | 2/20 | 0.52 |
| ▸ | MCL1 | Q07820 | 2/20 | 0.50 |
| ▸ | BCL2 | P10415 | 1/20 | 0.50 |
| ▸ | NPC1 | O15118 | 3/20 | 0.48 |
| ▸ | RAB9A | P51151 | 3/20 | 0.48 |
| ▸ | USP8 | P40818 | 1/20 | 0.46 |
| ▸ | USP7 | Q93009 | 1/20 | 0.46 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.46 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.46 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29634145 | 1.00 | MEN1 (0.53) | MEN1KMT2ACDC25BALDH1A1MAPK1 | |
| SCHEMBL30458681 | 1.00 | MEN1 (0.53) | MEN1KMT2ACDC25BALDH1A1MAPK1 | |
| SCHEMBL30130196 | 0.97 | MEN1 (0.56) | MEN1KMT2ACDC25BALDH1A1MAPK1 | |
| SCHEMBL29364188 | 0.97 | MEN1 (0.56) | MEN1KMT2ACDC25BALDH1A1MAPK1 | |
| SCHEMBL354514 | 0.97 | MEN1 (0.56) | MEN1KMT2ACDC25BALDH1A1MAPK1 | |
| SCHEMBL19230417 | 0.94 | ALDH1A1 (0.52) | MEN1KMT2ACDC25BALDH1A1MAPK1 | |
| Ammonia Solution, Strong SCHEMBL28255083 | 0.94 | MEN1 (0.53) | MEN1KMT2ACDC25BALDH1A1MAPK1 | |
| SCHEMBL29440306 | 0.92 | MEN1 (0.60) | MEN1KMT2ACDC25BALDH1A1MAPK1 | |
| SCHEMBL29634247 | 0.92 | MEN1 (0.60) | MEN1KMT2ACDC25BALDH1A1MAPK1 | |
| SCHEMBL347152 | 0.92 | MEN1 (0.60) | MEN1KMT2ACDC25BALDH1A1MAPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914296-B2 | Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating | MERCK PATENT GMBH (DE) | 2024-02-27 | — | — | US | disclosed |
| US-20230213863-A1 | COMPOUND, RESIST UNDERLAYER FILM COMPOSITION INCLUDING SAME, AND RESIST UNDERLAYER FILM | DONGJIN SEMICHEM CO., LTD. (KR) | 2023-07-06 | — | — | US | disclosed |
| US-20230213863-A1 | COMPOUND, RESIST UNDERLAYER FILM COMPOSITION INCLUDING SAME, AND RESIST UNDERLAYER FILM | DONGJIN SEMICHEM CO., LTD. (KR) | 2023-07-06 | — | — | US | disclosed |
| US-20230194989-A1 | ETHYNYL DERIVED COMPOSITE, A COMPOSITION COMPRISING THEREOF, A METHOD FOR MANUFACTURING A COATING BY IT, AND A METHOD FOR MANUFACTURING A DEVICE COMPRISING THE COATING | MERCK PATENT GMBH (DE) | 2023-06-22 | — | — | US | disclosed |
| US-20230194989-A1 | ETHYNYL DERIVED COMPOSITE, A COMPOSITION COMPRISING THEREOF, A METHOD FOR MANUFACTURING A COATING BY IT, AND A METHOD FOR MANUFACTURING A DEVICE COMPRISING THE COATING | MERCK PATENT GMBH (DE) | 2023-06-22 | — | — | US | disclosed |
| EP-3109703-B1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING SAME | TOKYO ELECTRON LTD (JP) | 2020-12-30 | — | — | EP | disclosed |
| US-10547007-B2 | Compound, organic electroluminescent material, organic electroluminescent element, and electronic apparatus | IDEMITSU KOSAN CO., LTD. (JP) | 2020-01-28 | — | — | US | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| US-9416296-B2 | Resist underlayer composition and method for forming pattern using same | DONGJIN SEMICHEM CO., LTD. (KR) | 2016-08-16 | — | — | US | disclosed |
| US-9416296-B2 | Resist underlayer composition and method for forming pattern using same | DONGJIN SEMICHEM CO., LTD. (KR) | 2016-08-16 | — | — | US | disclosed |
| US-9274426-B2 | Antireflective coating compositions and processes thereof | AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. (LU) | 2016-03-01 | — | — | US | disclosed |
| US-20160053132-A1 | RESIST UNDERLAYER COMPOSITION AND METHOD FOR FORMING PATTERN USING SAME | DONGJIN SEMICHEM CO., LTD. (KR) | 2016-02-25 | — | — | US | disclosed |
| US-20150309410-A1 | ANTIREFLECTIVE COATING COMPOSITIONS AND PROCESSES THEREOF | AZ ELECTRONIC MATERIALS S.À R.L. (LU) | 2015-10-29 | — | — | US | disclosed |
| US-20150309403-A1 | ANTIREFLECTIVE COATING COMPOSITIONS AND PROCESSES THEREOF | AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. (US) | 2015-10-29 | — | — | US | disclosed |
| US-9170495-B2 | Phenol monomer, polymer for forming a resist underlayer film including same, and composition for a resist underlayer film including same | DONGJIN SEMICHEM CO., LTD. (KR) | 2015-10-27 | — | — | US | disclosed |
| US-20140319097-A1 | PHENOL MONOMER, POLYMER FOR FORMING A RESIST UNDERLAYER FILM INCLUDING SAME, AND COMPOSITION FOR A RESIST UNDERLAYER FILM INCLUDING SAME | DONGJIN SEMICHEM CO., LTD. (KR) | 2014-10-30 | — | — | US | disclosed |
| WO-2014157881-A1 | RESIST UNDERLAYER COMPOSITION AND METHOD FOR FORMING PATTERN USING SAME | 주식회사 동진쎄미켐 (KR) | 2014-10-02 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | ASIC1, ASIC3, CLTA | MEN1 847/4885KMT2A 71/4885CDC25B 1086/4885 |
| US-10547007-B2 | Compound, organic electroluminescent material, organic electroluminescent element, and electronic apparatus | RPS10, RPS20, RPS19 | MEN1 966/4885KMT2A 1804/4885CDC25B 3600/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | MEN1 455/4885KMT2A 1432/4885CDC25B 4003/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.