SCHEMBL16590999

SCHEMBL16590999

CCC(C)(C)C(=O)OC1CCC(C(=O)OCOC)CC1

nearest known ligand 0.33

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
FKBP1A P62942 3/20 0.33
MAPT P10636 2/20 0.33
ALDH1A1 P00352 3/20 0.32
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
TSHR P16473 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
GAA P10253 2/20 0.32
HMGCR P04035 1/20 0.32
PKM P14618 1/20 0.31
HTT P42858 1/20 0.31
ADRB2 P07550 1/20 0.31
ADRB1 P08588 1/20 0.31
ADRB3 P13945 1/20 0.31
NPC1 O15118 1/20 0.30
RAB9A P51151 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16866389 0.85 GAA (0.41) FKBP1AALDH1A1MEN1KMT2ATSHR
SCHEMBL2734977 0.85 MLNR (0.34) FKBP1AMAPTALDH1A1MEN1KMT2A
SCHEMBL12920496 0.84 ADRB2 (0.31) MAPTALDH1A1MEN1KMT2ATSHR
SCHEMBL2734957 0.84 ALDH1A1 (0.37) FKBP1AALDH1A1MEN1KMT2AHMGCR
SCHEMBL13059557 0.83 FKBP1A (0.33) FKBP1AMAPTALDH1A1MEN1KMT2A
SCHEMBL14769032 0.82 MLNR (0.32) FKBP1A
SCHEMBL3434648 0.81 EPHX1 (0.37) FKBP1AMAPTSMN1; SMN2HMGCRHTT
SCHEMBL17404444 0.79 FKBP1A (0.32) FKBP1AALDH1A1MEN1KMT2ATSHR
SCHEMBL1628201 0.79 LMNA (0.36) FKBP1AKMT2ATSHRSMN1; SMN2HMGCR
SCHEMBL18119952 0.78 FKBP1A (0.34) FKBP1AMAPTSMN1; SMN2HMGCRHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11640113-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-02 US disclosed
US-20170121437-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK FUJIFILM CORPORATION (JP) 2017-05-04 US disclosed
US-20160195814-A1 PATTERN FORMATION METHOD, ELECTRONIC-DEVICE PRODUCTION METHOD, AND PROCESSING AGENT FUJIFILM CORPORATION (JP) 2016-07-07 US disclosed
US-20150086912-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-03-26 US disclosed