SCHEMBL16675603

SCHEMBL16675603

CCC(C)(C)c1c2ccccc2c(O)c2ccccc12

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ GABRA1 P14867 1/20 0.37
▸ GABRB2 P47870 1/20 0.37
▸ LMNA P02545 2/20 0.36
▸ HTT P42858 1/20 0.36
▸ KDM4E B2RXH2 4/20 0.36
▸ MEN1 O00255 2/20 0.36
▸ MAPT P10636 2/20 0.36
▸ KMT2A Q03164 2/20 0.36
▸ NSD2 O96028 1/20 0.36
▸ POLB P06746 1/20 0.36
▸ MCL1 Q07820 1/20 0.36
▸ ALDH1A1 P00352 1/20 0.34
▸ GAA P10253 1/20 0.34
▸ CACNA1B Q00975 1/20 0.34
▸ APBA1 Q02410 1/20 0.34
▸ PKM P14618 1/20 0.34
▸ HMGB1 P09429 1/20 0.34
▸ CXCL12 P48061 1/20 0.34
▸ RCE1 Q9Y256 1/20 0.34
▸ CHRNB2 P17787 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20408445 0.80 CHRNB2 (0.36) GABRA1LMNACHRNB2CHRNA7CHRNA4
SCHEMBL21751238 0.77 NPC1 (0.47) LMNAHTTKDM4EMEN1MAPT
SCHEMBL29565834 0.77 NPC1 (0.47) LMNAHTTKDM4EMEN1MAPT
SCHEMBL4503427 0.71 TRPA1 (0.41) GABRA1GABRB2LMNAKDM4EMAPT
SCHEMBL526630 0.71 IDO1 (0.56) LMNAHTTKDM4EMEN1MAPT
SCHEMBL720140 0.70 ESR1 (0.41) GABRA1GABRB2LMNAHTTALDH1A1
SCHEMBL19195690 0.70 CA2 (0.39) GABRA1GABRB2LMNAHTTKDM4E
SCHEMBL14506247 0.70 CA2 (0.39) GABRA1GABRB2LMNAHTTKDM4E
SCHEMBL27336298 0.69 ALDH1A1 (0.38) LMNAKDM4EMEN1MAPTKMT2A
SCHEMBL17722824 0.69 CYP1A2 (0.53) CYP2C9HPGDHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 — — US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 — — US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 — — US disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 — — US disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 — — US disclosed
US-11762288-B2 Resist composition, method of forming resist pattern, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-19 — — US disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 — — US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 — — US disclosed
US-11693313-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 — — US disclosed
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 — — US disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 — — US disclosed
US-11644751-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-09 — — US disclosed
US-20180210338-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-07-26 — — US disclosed
US-9718901-B2 Resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2017-08-01 — — US disclosed
US-20150118623-A1 RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2015-04-30 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11693313-B2 Resist composition and method of forming resist pattern C1R, C1S, C9 GABRA1 2761/4885GABRB2 2810/4885LMNA 611/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 GABRA1 3138/4885GABRB2 2219/4885LMNA 2768/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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