SCHEMBL1697248

SCHEMBL1697248

C=C(C)C(=O)O/N=C(\c1c(F)cccc1F)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.38
KMT2A Q03164 3/20 0.37
CES2 O00748 2/20 0.37
CES1 P23141 2/20 0.37
TDP1 Q9NUW8 1/20 0.32
RAB9A P51151 1/20 0.31
ELANE P08246 1/20 0.31
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2625686 0.84 PKM (0.39) POLBKMT2ACES2CES1TDP1
SCHEMBL775941 0.82 KMT2A (0.46) POLBKMT2ACES2CES1TDP1
SCHEMBL775651 0.79 ELANE (0.44) KMT2ACES2CES1TDP1RAB9A
SCHEMBL10172183 0.79 ELANE (0.44) KMT2ACES2CES1TDP1RAB9A
SCHEMBL12705069 0.79 ELANE (0.44) KMT2ACES2CES1TDP1RAB9A
SCHEMBL775927 0.73 NPC1 (0.42) KMT2ACES2CES1TDP1RAB9A
SCHEMBL12726767 0.70 ELANE (0.41) POLBKMT2ACES2CES1TDP1
SCHEMBL10150714 0.69 POLB (0.41) POLBKMT2ACES2CES1TDP1
SCHEMBL775653 0.67 ELANE (0.38) POLBKMT2ACES2CES1TDP1
SCHEMBL775642 0.66 ELANE (0.37) KMT2ACES1TDP1ELANELMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9671693-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-06-06 US disclosed
US-9671693-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-06-06 US disclosed
US-9507258-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-11-29 US disclosed
US-9507258-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-11-29 US disclosed
US-9360754-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-06-07 US disclosed
US-9360754-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-06-07 US disclosed
US-9291893-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-03-22 US disclosed
US-9291893-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-03-22 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-20120088190-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-12 US disclosed
US-20120088190-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-12 US disclosed
US-20120052443-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-01 US disclosed
US-20120052443-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-01 US disclosed
US-20120052440-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-01 US disclosed
US-20120052440-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-01 US disclosed
US-20120034563-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-09 US disclosed
US-20120034563-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-09 US disclosed
US-20120028188-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-02 US disclosed
US-20120028188-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120052440-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME C1S, C1R, CLIC1 POLB 2496/4885KMT2A 1265/4885CES2 1067/4885
US-20120088190-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME AFF1, FGFR1, FRG1 POLB 2638/4885KMT2A 1809/4885CES2 2656/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.