Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28699611 | 0.97 | LMNA (0.38) | LMNA | |
| SCHEMBL4431674 | 0.97 | LMNA (0.38) | LMNA | |
| SCHEMBL5011958 | 0.97 | LMNA (0.38) | LMNA | |
| SCHEMBL21625240 | 0.97 | LMNA (0.38) | LMNA | |
| SCHEMBL6301272 | 0.90 | — | — | |
| SCHEMBL4386192 | 0.89 | ALDH1A1 (0.31) | — | |
| SCHEMBL5013984 | 0.86 | — | — | |
| SCHEMBL29032518 | 0.86 | — | — | |
| Ammonia Solution, Strong SCHEMBL7048356 | 0.86 | — | — | |
| SCHEMBL5014889 | 0.86 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114057605-B | Method for producing nitrile by gas phase dehydration | 化学与精细化工广东省实验室 | 2024-02-20 | — | — | CN | claimed |
| CN-115394641-A | Nitrogen-containing compounds for etching semiconductor structures | 乔治洛德方法研究和开发液化空气有限公司 | 2022-11-25 | — | — | CN | claimed |
| CN-114057605-A | Method for preparing nitrile by gas phase dehydration | 化学与精细化工广东省实验室 | 2022-02-18 | — | — | CN | claimed |
| CN-114057605-B | Method for producing nitrile by gas phase dehydration | 化学与精细化工广东省实验室 | 2024-02-20 | — | — | CN | disclosed |
| CN-114057605-A | Method for preparing nitrile by gas phase dehydration | 化学与精细化工广东省实验室 | 2022-02-18 | — | — | CN | disclosed |
| US-11024513-B2 | Methods for minimizing sidewall damage during low k etch processes | AIR LIQUIDE ELECTRONICS U.S. LP (US) | 2021-06-01 | — | — | US | disclosed |
| US-20190326126-A1 | METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | AIR LIQUIDE ELECTRONICS U.S. LP | 2019-10-24 | — | — | US | disclosed |
| US-10347498-B2 | Methods of minimizing plasma-induced sidewall damage during low K etch processes | L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2019-07-09 | — | — | US | disclosed |
| US-10256109-B2 | Nitrogen-containing compounds for etching semiconductor structures | AMERICAN AIR LIQUIDE, INC. (US) | 2019-04-09 | — | — | US | disclosed |
| US-20180211845-A1 | METHODS OF MINIMIZING PLASMA-INDUCED SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2018-07-26 | — | — | US | disclosed |
| US-20180211845-A1 | METHODS OF MINIMIZING PLASMA-INDUCED SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2018-07-26 | — | — | US | disclosed |
| US-20170229316-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AIR LIQUIDE AMERICAN (US) | 2017-08-10 | — | — | US | disclosed |
| US-20170229316-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AIR LIQUIDE AMERICAN (US) | 2017-08-10 | — | — | US | disclosed |
| US-9659788-B2 | Nitrogen-containing compounds for etching semiconductor structures | AMERICAN AIR LIQUIDE, INC. (US) | 2017-05-23 | — | — | US | disclosed |
| US-9659788-B2 | Nitrogen-containing compounds for etching semiconductor structures | AMERICAN AIR LIQUIDE, INC. (US) | 2017-05-23 | — | — | US | disclosed |
| US-20170110336-A1 | METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2017-04-20 | — | — | US | disclosed |
| US-20170110336-A1 | METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2017-04-20 | — | — | US | disclosed |
| US-20150371869-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AMERICAN AIR LIQUIDE, INC. | 2015-12-24 | — | — | US | disclosed |
| US-20150371869-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AMERICAN AIR LIQUIDE, INC. | 2015-12-24 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10256109-B2 | Nitrogen-containing compounds for etching semiconductor structures | NCF1, C9, MSN | LMNA 827/4885 |
| US-20150371869-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | NCF1, C9, MSN | LMNA 827/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.