SCHEMBL4386192

SCHEMBL4386192

N#CC(F)(F)C(F)(F)C(F)(F)C(F)(F)C#N

nearest known ligand 0.31

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.31
TSHR P16473 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5014889 0.96
Ammonia Solution, Strong SCHEMBL7048356 0.96
SCHEMBL29032518 0.96
SCHEMBL5013984 0.96
SCHEMBL9495942 0.92 ALDH1A1 (0.31) ALDH1A1TSHR
SCHEMBL17356129 0.89 LMNA (0.33)
SCHEMBL7048355 0.89
SCHEMBL5011958 0.87 LMNA (0.38)
SCHEMBL21625240 0.87 LMNA (0.38)
SCHEMBL28699611 0.87 LMNA (0.38)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 95 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115394641-A Nitrogen-containing compounds for etching semiconductor structures 乔治洛德方法研究和开发液化空气有限公司 2022-11-25 CN claimed
CN-107924842-B Nitrogen-containing compounds for etching semiconductor structures 乔治洛德方法研究和开发液化空气有限公司 2022-09-06 CN claimed
CN-113130988-A Electrolyte and electrochemical device using same 深圳市研一新材料有限责任公司 2021-07-16 CN claimed
CN-113130993-A Electrolyte and electrochemical device thereof 深圳市研一新材料有限责任公司 2021-07-16 CN claimed
US-20190326126-A1 METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES AIR LIQUIDE ELECTRONICS U.S. LP 2019-10-24 US claimed
US-10347498-B2 Methods of minimizing plasma-induced sidewall damage during low K etch processes L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2019-07-09 US claimed
EP-3312929-B1 ELECTROLYTE FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME SOULBRAIN CO LTD (KR) 2019-04-17 EP claimed
US-10256109-B2 Nitrogen-containing compounds for etching semiconductor structures AMERICAN AIR LIQUIDE, INC. (US) 2019-04-09 US claimed
US-20180211845-A1 METHODS OF MINIMIZING PLASMA-INDUCED SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2018-07-26 US claimed
EP-3345211-A1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2018-07-11 EP claimed
CN-107924842-A NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES 乔治洛德方法研究和开发液化空气有限公司 2018-04-17 CN claimed
US-20170229316-A1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AIR LIQUIDE AMERICAN (US) 2017-08-10 US claimed
US-9659788-B2 Nitrogen-containing compounds for etching semiconductor structures AMERICAN AIR LIQUIDE, INC. (US) 2017-05-23 US claimed
US-20170110336-A1 METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2017-04-20 US claimed
WO-2017040518-A1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2017-03-09 WO claimed
US-20150371869-A1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AMERICAN AIR LIQUIDE, INC. 2015-12-24 US claimed
EP-3345211-B1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AIR LIQUIDE (FR) 2025-12-10 EP disclosed
EP-4220805-A2 ELECTROLYTIC SOLUTION, ELECTROCHEMICAL DEVICE, AND ELECTRONIC DEVICE Ningde Amperex Technology Limited (CN) 2023-08-02 EP disclosed
US-4125513-A Thermoplastic compositions containing triazine polymer coated reinforcing agents TEXACO INC. (US) 1978-11-14 US disclosed
US-4100147-A Polymerization of aliphatic nitriles TEXACO INC. (US) 1978-07-11 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10256109-B2 Nitrogen-containing compounds for etching semiconductor structures NCF1, C9, MSN ALDH1A1 4541/4885TSHR 4339/4885
US-20150371869-A1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES NCF1, C9, MSN ALDH1A1 4541/4885TSHR 4339/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.