Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 14/20 | 0.48 |
| ▸ | CA1 | P00915 | 13/20 | 0.45 |
| ▸ | MMP1 | P03956 | 3/20 | 0.45 |
| ▸ | MMP2 | P08253 | 3/20 | 0.45 |
| ▸ | MMP9 | P14780 | 3/20 | 0.45 |
| ▸ | MMP8 | P22894 | 3/20 | 0.45 |
| ▸ | MMP13 | P45452 | 3/20 | 0.45 |
| ▸ | F2 | P00734 | 4/20 | 0.41 |
| ▸ | PRSS1 | P07477 | 4/20 | 0.41 |
| ▸ | PRSS2 | P07478 | 4/20 | 0.41 |
| ▸ | PRSS3 | P35030 | 4/20 | 0.41 |
| ▸ | THRB | P10828 | 1/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4606069 | 0.98 | CA2 (0.44) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL11802495 | 0.80 | CA2 (0.52) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL8108242 | 0.80 | CA2 (0.52) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL16444987 | 0.80 | CA2 (0.52) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL3960813 | 0.80 | CA2 (0.52) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL6396150 | 0.80 | CA2 (0.52) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL8437170 | 0.80 | CA2 (0.52) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL11810378 | 0.80 | CA2 (0.52) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL1146256 | 0.80 | CA2 (0.52) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL11806270 | 0.80 | CA2 (0.52) | CA2CA1MMP1MMP2MMP9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 363 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260104643-A1 | METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-16 | — | — | US | claimed |
| US-12535739-B2 | Method of forming photoresist pattern | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-27 | — | — | US | claimed |
| US-20240077802-A1 | METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-03-07 | — | — | US | claimed |
| US-11626293-B2 | Method of manufacturing a semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-04-11 | — | — | US | claimed |
| US-20220230889-A1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-07-21 | — | — | US | claimed |
| US-6610456-B2 | Such as 4-(hexafluorohydroxyisopropyl)styrene copolymer with tert-butyl alpha-trifluoromethyl acrylate; transparent to deep ultraviolet (DUV) radiation | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-08-26 | — | — | US | claimed |
| US-20020164538-A1 | Fluorine-containing styrene acrylate copolymers and use thereof in lithographic photoresist compositions | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-11-07 | — | — | US | claimed |
| US-20260150633-A1 | UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-28 | — | — | US | disclosed |
| US-12638775-B2 | Methods and compositions for improved patterning of photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-26 | — | — | US | disclosed |
| US-20260140444-A1 | PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-21 | — | — | US | disclosed |
| CN-122028714-A | Method for manufacturing semiconductor device and composition for coating patterned photoresist | 台湾积体电路制造股份有限公司 | 2026-05-12 | — | — | CN | disclosed |
| US-20260130180-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WAFER PROTECTIVE COMPOSITION | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-07 | — | — | US | disclosed |
| US-12619148-B2 | Crosslinkable photoresist for extreme ultraviolet lithography | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-05 | — | — | US | disclosed |
| US-7150957-B2 | Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-12-19 | — | — | US | disclosed |
| US-20060275701-A1 | Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions | INTERNATIONAL BUSINESS MACHINES (US) | 2006-12-07 | — | — | US | disclosed |
| CN-1854133-A | Heterocycle-bearing onium salts | WAKO PURE CHEM IND LTD (JP) | 2006-11-01 | — | — | CN | disclosed |
| CN-1622943-A | Heterocyclic onium salt | WAKO PURE CHEM IND LTD (JP) | 2005-06-01 | — | — | CN | disclosed |
| US-20040214102-A1 | Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions | GLOBALFOUNDRIES U.S. INC. | 2004-10-28 | — | — | US | disclosed |
| US-6610456-B2 | Such as 4-(hexafluorohydroxyisopropyl)styrene copolymer with tert-butyl alpha-trifluoromethyl acrylate; transparent to deep ultraviolet (DUV) radiation | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-08-26 | — | — | US | disclosed |
| US-20020164538-A1 | Fluorine-containing styrene acrylate copolymers and use thereof in lithographic photoresist compositions | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-11-07 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260140444-A1 | PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | INO80C, INO80, NAT10 | CA2 2393/4885CA1 1124/4885MMP1 431/4885 |
| US-12535739-B2 | Method of forming photoresist pattern | DSTN, PFAS, FASN | CA2 4072/4885CA1 2898/4885MMP1 4086/4885 |
| US-20260150633-A1 | UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | ATM, SRMS, PARG | CA2 3673/4885CA1 3493/4885MMP1 3156/4885 |
| US-12619148-B2 | Crosslinkable photoresist for extreme ultraviolet lithography | LBR, ARCN1, ERCC1 | CA2 492/4885CA1 458/4885MMP1 1351/4885 |
| US-20260130180-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WAFER PROTECTIVE COMPOSITION | C9, C1S, ZKSCAN2 | CA2 1510/4885CA1 19/4885MMP1 2244/4885 |
| US-12638775-B2 | Methods and compositions for improved patterning of photoresist | DSG1, SCO2, ERCC1 | CA2 100/4885CA1 57/4885MMP1 1211/4885 |
| US-20260104643-A1 | METHOD OF FORMING PHOTORESIST PATTERN | DSTN, PFAS, DNTT | CA2 3477/4885CA1 2276/4885MMP1 4496/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.