SCHEMBL178335

SCHEMBL178335

O=C(NS(=O)(=O)C(F)(F)F)c1ccccc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HDAC3 O15379 1/20 0.52
CA12 O43570 1/20 0.52
CA1 P00915 1/20 0.52
IDO1 P14902 1/20 0.52
ALOX15 P16050 1/20 0.52
HDAC1 Q13547 1/20 0.52
CA9 Q16790 1/20 0.52
HDAC7 Q8WUI4 1/20 0.52
HDAC2 Q92769 1/20 0.52
HSD17B10 Q99714 1/20 0.52
HDAC8 Q9BY41 1/20 0.52
HDAC6 Q9UBN7 1/20 0.52
NCOR2 Q9Y618 1/20 0.52
LMNA P02545 2/20 0.49
MEN1 O00255 1/20 0.49
KMT2A Q03164 1/20 0.49
FLT1 P17948 1/20 0.49
FLT4 P35916 1/20 0.49
KDR P35968 1/20 0.49
L3MBTL1 Q9Y468 1/20 0.49

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22503188 0.90 VCP (0.45) HDAC3CA12CA1IDO1ALOX15
SCHEMBL22503084 0.90 CTDSP1 (0.53) HDAC3HDAC1HDAC7HDAC2HDAC8
SCHEMBL22503205 0.87 KMT2A (0.56) LMNAMEN1KMT2AFLT1FLT4
SCHEMBL22503085 0.85 VCP (0.52) HDAC3CA1HDAC1CA9HDAC7
SCHEMBL22503181 0.85 PTPN11 (0.51) HDAC3HDAC1HDAC7HDAC2HDAC8
SCHEMBL22503128 0.83 PTGS2 (0.49) CA1CA9MEN1KMT2ACES1
SCHEMBL22503135 0.83 SCN5A (0.57) KMT2ANPC1RAB9ACES1MAPT
SCHEMBL22503140 0.83 MPO (0.47) CA1LMNAMEN1KMT2AFLT1
SCHEMBL22503119 0.81 TRPV1 (0.50) CA1HDAC1HDAC7HDAC8HDAC6
SCHEMBL22503271 0.81 PTGS1 (0.50) CA12CA1CA9LMNAMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
CN-107544208-B Negative photosensitive resin composition, spacer, protective film and liquid crystal display element 奇美实业股份有限公司 2022-05-31 CN disclosed
CN-114269732-A Pesticidally active pyrazine-amide compounds 先正达农作物保护股份公司 2022-04-01 CN disclosed
CN-113631552-A Pesticidally active azoleamide compounds 先正达农作物保护股份公司 2021-11-09 CN disclosed
CN-112739683-A Preparation method and intermediate of brivaracetam 上海宣泰医药科技股份有限公司 2021-04-30 CN disclosed
US-10792489-B2 Bio-electrode composition, bio-electrode, and method for manufacturing the bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-06 US disclosed
US-10290900-B2 Non-aqueous electrolytic solution and lithium ion secondary battery comprising same NIPPON SHOKUBAI CO., LTD. (JP) 2019-05-14 US disclosed
US-20170117582-A1 NON-AQUEOUS ELECTROLYTIC SOLUTION AND LITHIUM ION SECONDARY BATTERY COMPRISING SAME NIPPON SHOKUBAI CO., LTD. (JP) 2017-04-27 US disclosed
US-20170117582-A1 NON-AQUEOUS ELECTROLYTIC SOLUTION AND LITHIUM ION SECONDARY BATTERY COMPRISING SAME NIPPON SHOKUBAI CO., LTD. (JP) 2017-04-27 US disclosed
US-20130078432-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130004740-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD EACH USING THE COMPOSITION, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed
US-20130004739-A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed
US-20120135348-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-05-31 US disclosed
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-20120058427-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-03-08 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
EP-0277814-B1 ANTI-GLAUCOMA USE OF TRIFLUOROMETHANESULFONAMIDE RIKER LABORATORIES, INC. (US) 1993-07-28 EP disclosed
US-4824866-A Anti-glaucoma use of trifluoromethanesulfonamide RIKER LABORATORIES, INC. (US) 1989-04-25 US disclosed
EP-0277814-A2 Anti-glaucoma use of trifluoromethanesulfonamide RIKER LABORATORIES, INC. (US) 1988-08-10 EP disclosed