SCHEMBL18031569

SCHEMBL18031569

Cc1ccc2c(c1)nnn2C(=O)OC(C)C

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KCNMA1 Q12791 2/20 0.53
▸ GAA P10253 6/20 0.43
▸ MGAM O43451 5/20 0.43
▸ AMY1A P0DUB6 5/20 0.43
▸ SI P14410 5/20 0.43
▸ MGAM2 Q2M2H8 5/20 0.43
▸ RAB9A P51151 1/20 0.40
▸ HCAR3 P49019 2/20 0.40
▸ HPGD P15428 1/20 0.40
▸ HCAR2 Q8TDS4 1/20 0.40
▸ ALDH1A1 P00352 2/20 0.39
▸ LMNA P02545 1/20 0.39
▸ TSHR P16473 1/20 0.39
▸ TUBB4A P04350 1/20 0.38
▸ TUBB P07437 1/20 0.38
▸ TUBA3C P0DPH7 1/20 0.38
▸ TUBA1B P68363 1/20 0.38
▸ TUBA4A P68366 1/20 0.38
▸ TUBB4B P68371 1/20 0.38
▸ TUBB3 Q13509 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18033712 0.83 HCAR3 (0.60) HCAR3HPGDHCAR2
SCHEMBL10428733 0.83 KCNMA1 (0.62) KCNMA1GAAMGAMAMY1ASI
SCHEMBL1161341 0.82 KCNMA1 (0.50) KCNMA1GAAMGAMAMY1ASI
SCHEMBL14639695 0.81 GAA (0.54) KCNMA1GAAMGAMAMY1ASI
SCHEMBL31666989 0.80 KCNMA1 (0.53) KCNMA1GAAMGAMAMY1ASI
SCHEMBL1161338 0.80 KCNMA1 (0.53) KCNMA1GAAMGAMAMY1ASI
SCHEMBL11440840 0.79 KCNMA1 (0.61) KCNMA1GAAMGAMAMY1ASI
SCHEMBL4054573 0.79 KCNMA1 (0.61) KCNMA1GAAMGAMAMY1ASI
SCHEMBL24019555 0.77 KCNMA1 (0.59) KCNMA1GAAMGAMAMY1ASI
SCHEMBL10428583 0.77 KCNMA1 (0.59) KCNMA1GAAMGAMAMY1ASI

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 — — US disclosed
US-9740098-B2 Chemically amplified negative resist composition using novel onium salt and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 — — US disclosed
US-9720323-B2 Chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-01 — — US disclosed
US-20160299428-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
US-20160246175-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-25 — — US disclosed
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