⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19853137 | 0.84 | ALDH1A1 (0.33) | — | |
| SCHEMBL18476389 | 0.83 | — | — | |
| SCHEMBL20052927 | 0.83 | — | — | |
| SCHEMBL21786273 | 0.81 | — | — | |
| SCHEMBL18478375 | 0.78 | — | — | |
| SCHEMBL23963324 | 0.74 | — | — | |
| SCHEMBL18470622 | 0.72 | TSHR (0.32) | — | |
| SCHEMBL21251557 | 0.72 | — | — | |
| SCHEMBL18400959 | 0.71 | ALDH1A1 (0.32) | — | |
| SCHEMBL23963209 | 0.71 | ALDH1A1 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230296981-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-11131926-B2 | Resist composition and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-09-28 | — | — | US | disclosed |
| US-11124477-B2 | Sulfonium compound, positive resist composition, and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-09-21 | — | — | US | disclosed |
| US-20200071268-A1 | SULFONIUM COMPOUND, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-03-05 | — | — | US | disclosed |
| US-10416558-B2 | Positive resist composition, resist pattern forming process, and photomask blank | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-09-17 | — | — | US | disclosed |
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-9897916-B2 | Compound, polymer compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20180039177-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-20170037167-A1 | POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-09 | — | — | US | disclosed |
| US-20170038683-A1 | COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-09 | — | — | US | disclosed |