SCHEMBL20052927

SCHEMBL20052927

C=CC(=O)OCC1CC2CC(C(=O)OC(CS(=O)(=O)O)(C(F)(F)F)C(F)(F)F)C1C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18476387 0.84 ALDH1A1 (0.32) —
SCHEMBL18476386 0.83 — —
SCHEMBL18476389 0.81 — —
SCHEMBL21786273 0.80 — —
SCHEMBL23974082 0.73 ALDH1A1 (0.30) —
SCHEMBL23140675 0.72 — —
SCHEMBL24452996 0.72 — —
SCHEMBL18470622 0.71 TSHR (0.32) —
SCHEMBL21251557 0.71 — —
SCHEMBL23974108 0.70 ALDH1A1 (0.36) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230341775-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-26 — — US disclosed
US-20220404701-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-22 — — US disclosed
US-9944738-B2 Polymer compound, positive resist composition, laminate, and resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-04-17 — — US disclosed
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