SCHEMBL18476389

SCHEMBL18476389

C=CC(=O)OCC1CC2OC1CC2C(=O)OC(CS(=O)(=O)O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18476390 0.84 ALDH1A1 (0.34) —
SCHEMBL21786273 0.84 — —
SCHEMBL18476386 0.83 — —
SCHEMBL20052927 0.81 — —
SCHEMBL18478341 0.81 — —
SCHEMBL23963453 0.73 ALDH1A1 (0.30) —
SCHEMBL13079558 0.72 HTR1A (0.30) —
SCHEMBL18470622 0.71 TSHR (0.32) —
SCHEMBL18470369 0.69 TSHR (0.34) —
SCHEMBL18478376 0.69 ALDH1A1 (0.33) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230296980-A1 RESIST MATERIAL AND PATTERN FORMING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-21 — — US disclosed
US-11131926-B2 Resist composition and resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-09-28 — — US disclosed
US-10416558-B2 Positive resist composition, resist pattern forming process, and photomask blank SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-09-17 — — US disclosed
US-20180180992-A1 Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-28 — — US disclosed
US-9944738-B2 Polymer compound, positive resist composition, laminate, and resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-04-17 — — US disclosed
US-20180039177-A1 POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-08 — — US disclosed
US-20170037167-A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-09 — — US disclosed
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