SCHEMBL21786273

SCHEMBL21786273

C=CC(=O)OCC1CC2CC(C(=O)OC(CS(=O)(=O)O)(C(F)(F)F)C(F)(F)F)C1O2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18478376 0.85 ALDH1A1 (0.33) —
SCHEMBL18476389 0.84 — —
SCHEMBL18476386 0.81 — —
SCHEMBL20052927 0.80 — —
SCHEMBL23974111 0.72 — —
SCHEMBL18478341 0.71 — —
SCHEMBL13079558 0.70 HTR1A (0.30) —
SCHEMBL18470622 0.69 TSHR (0.32) —
SCHEMBL18476390 0.69 ALDH1A1 (0.34) —
SCHEMBL18470369 0.68 TSHR (0.34) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230341775-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-26 — — US disclosed
US-20230296981-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-21 — — US disclosed
US-20220404701-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-22 — — US disclosed
US-11124477-B2 Sulfonium compound, positive resist composition, and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-09-21 — — US disclosed
US-20200071268-A1 SULFONIUM COMPOUND, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-03-05 — — US disclosed
Send feedback