SCHEMBL1849865

SCHEMBL1849865

CCC(C)(C)OC(=O)Nc1ccc(Cc2ccc(N)cc2)cc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 1/20 0.52
MAPK14 Q16539 2/20 0.46
SAE1 Q9UBE0 1/20 0.42
UBA2 Q9UBT2 1/20 0.42
MAPT P10636 3/20 0.41
TDP1 Q9NUW8 3/20 0.41
KDM4E B2RXH2 1/20 0.41
GLA P06280 1/20 0.41
GAA P10253 1/20 0.41
THRB P10828 1/20 0.41
BLM P54132 1/20 0.41
CASP6 P55212 1/20 0.41
GFER P55789 1/20 0.41
RAB9A P51151 2/20 0.41
SMN1; SMN2 Q16637 2/20 0.41
NPC1 O15118 1/20 0.41
TP53 P04637 1/20 0.41
PPARG P37231 2/20 0.39
PPARA Q07869 1/20 0.39
TSHR P16473 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1847709 0.93 CYP17A1 (0.58) CYP17A1MAPK14SAE1UBA2MAPT
SCHEMBL134932 0.87 CYP17A1 (0.67) CYP17A1MAPK14SAE1UBA2MAPT
SCHEMBL11134616 0.81 SMN1; SMN2 (0.55) CYP17A1MAPK14SAE1UBA2MAPT
SCHEMBL132701 0.79 CYP17A1 (0.76) CYP17A1MAPK14SAE1UBA2PPARG
SCHEMBL14905920 0.77 RAB9A (0.50) MAPTKDM4EGAARAB9ASMN1; SMN2
SCHEMBL4237996 0.77 SMN1; SMN2 (0.62) MAPK14SAE1UBA2MAPTTDP1
SCHEMBL78108 0.77 MAPT (0.53) CYP17A1MAPTTDP1KDM4EGLA
SCHEMBL29813526 0.77 CYP17A1 (0.42) CYP17A1MAPK14SAE1UBA2MAPT
SCHEMBL22700779 0.76 RAB9A (0.50) MAPK14SAE1UBA2MAPTTDP1
SCHEMBL23054180 0.76 CYP17A1 (0.53) CYP17A1MAPK14SAE1UBA2RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
US-9459532-B2 Radiation-sensitive resin composition, polymer and compound JSR CORPORATION (JP) 2016-10-04 US disclosed
US-9323146-B2 Photoresist composition, resist pattern-forming method, compound, acid generating agent, and photodegradable base JSR CORPORATION (JP) 2016-04-26 US disclosed
US-9304393-B2 Radiation-sensitive resin composition and compound JSR CORPORATION (JP) 2016-04-05 US disclosed
US-9229323-B2 Pattern-forming method JSR CORPORATION (JP) 2016-01-05 US disclosed
US-9046765-B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-20140363769-A1 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE JSR CORPORATION (JP) 2014-12-11 US disclosed
US-20140255854-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-09-11 US disclosed
US-20140023968-A1 RESIST PATTERN-FORMING METHOD, RESIST PATTERN-FORMING RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM JSR CORPORATION (JP) 2014-01-23 US disclosed
US-20130337385-A1 NEGATIVE PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION JSR CORPORATION (JP) 2013-12-19 US disclosed
US-20130316287-A1 PHOTORESIST COMPOSITION JSR CORPORATION (JP) 2013-11-28 US disclosed
US-20130288179-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2013-10-31 US disclosed
US-20130216951-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND JSR CORPORATION (JP) 2013-08-22 US disclosed
EP-2623558-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR Corporation (JP) 2013-08-07 EP disclosed
US-8431324-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2013-04-30 US disclosed
US-8182977-B2 Polymer and positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2012-05-22 US disclosed
US-20110223537-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-09-15 US disclosed
EP-2325695-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2011-05-25 EP disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 US disclosed
US-20100239981-A1 POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20140363769-A1 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE FRG1, FGFR1, IGF1R CYP17A1 2323/4885MAPK14 2665/4885SAE1 2726/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.