SCHEMBL18503869

SCHEMBL18503869

O=C(O)CCS(=O)(=O)c1ccccn1

nearest known ligand 0.54

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.54
TSHR P16473 1/20 0.54
POLB P06746 3/20 0.49
KEAP1 Q14145 1/20 0.49
NFE2L2 Q16236 1/20 0.49
APEX1 P27695 1/20 0.49
ALDH1A1 P00352 5/20 0.46
LMNA P02545 1/20 0.43
GAA P10253 1/20 0.43
KDM4E B2RXH2 1/20 0.42
NPSR1 Q6W5P4 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
NPC1 O15118 1/20 0.41
PKM P14618 1/20 0.41
RAB9A P51151 1/20 0.41
HSD11B1 P28845 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18503870 0.90 KEAP1 (0.54) HTTTSHRPOLBKEAP1NFE2L2
SCHEMBL28751128 0.85 KEAP1 (0.48) HTTTSHRPOLBKEAP1NFE2L2
SCHEMBL3736787 0.81 ALDH1A1 (0.45) HTTTSHRPOLBAPEX1ALDH1A1
SCHEMBL1379068 0.81 ALDH1A1 (0.48) HTTTSHRPOLBKEAP1NFE2L2
SCHEMBL4683020 0.80 NFE2L2 (0.53) HTTTSHRPOLBKEAP1NFE2L2
SCHEMBL4685420 0.80 NFE2L2 (0.47) HTTTSHRPOLBKEAP1NFE2L2
SCHEMBL4683019 0.78 NFE2L2 (0.58) HTTTSHRPOLBKEAP1NFE2L2
SCHEMBL4685957 0.77 KEAP1 (0.57) HTTTSHRPOLBKEAP1NFE2L2
SCHEMBL28982861 0.77 KEAP1 (0.47) HTTTSHRPOLBKEAP1NFE2L2
SCHEMBL4004512 0.77 NFE2L2 (0.53) HTTTSHRPOLBKEAP1NFE2L2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9910354-B2 Resist underlayer film-forming composition and method for forming resist pattern using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-03-06 US disclosed
US-9910354-B2 Resist underlayer film-forming composition and method for forming resist pattern using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-03-06 US disclosed
US-20170045820-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-02-16 US disclosed
US-20170045820-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-02-16 US disclosed