SCHEMBL18614964

SCHEMBL18614964

c1coc(C2c3c(ccc4ccccc34)Oc3ccc4ccccc4c32)c1

nearest known ligand 0.63

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.49
CYP2C19 P33261 1/20 0.49
NPSR1 Q6W5P4 7/20 0.48
CFTR P13569 1/20 0.47
GOPC Q9HD26 1/20 0.47
HPGD P15428 2/20 0.43
LMNA P02545 1/20 0.42
MAPT P10636 1/20 0.42
HTT P42858 1/20 0.42
KMT2A Q03164 1/20 0.42
HSD17B10 Q99714 1/20 0.40
NPC1 O15118 1/20 0.39
ALDH1A1 P00352 1/20 0.39
POLB P06746 1/20 0.39
RAB9A P51151 1/20 0.39
TAAR1 Q96RJ0 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL415460 0.76 NPSR1 (0.68) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL414934 0.76 CYP1A2 (0.54) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL416279 0.75 CYP1A2 (0.53) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL28473778 0.74 NPSR1 (0.54) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL28476451 0.74 CYP1A2 (0.49) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL414309 0.72 NPSR1 (0.52) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL21189670 0.72 CYP1A2 (0.62) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL18287923 0.72 CYP1A2 (0.57) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL416287 0.72 CYP1A2 (0.62) CYP1A2CYP2C19NPSR1CFTRGOPC
SCHEMBL24224558 0.71 NPSR1 (0.58) CYP1A2CYP2C19NPSR1CFTRGOPC

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11143962-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-10-12 US disclosed
US-11137686-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-10-05 US disclosed
US-20190041750-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD THEREOF, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-02-07 US disclosed
WO-2017038645-A1 MATERIAL FOR FORMING UNDERLAYER FILMS FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILMS FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD 三菱瓦斯化学株式会社 2017-03-09 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20190041750-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD THEREOF, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD MLLT1, JMJD6, DOT1L CYP1A2 2243/4885CYP2C19 3145/4885NPSR1 4579/4885
US-11137686-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method MLLT1, PRDM9, NAP1L1 CYP1A2 2104/4885CYP2C19 2589/4885NPSR1 4116/4885
US-11143962-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method MLLT1, MLLT3, KDM2B CYP1A2 2336/4885CYP2C19 3128/4885NPSR1 4355/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.