SCHEMBL18671843

SCHEMBL18671843

CCC(C)(I)C(=O)OCc1cccc2ccccc12

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ EPHX1 P07099 1/20 0.45
▸ ATM Q13315 1/20 0.44
▸ KMT2A Q03164 4/20 0.43
▸ MEN1 O00255 3/20 0.43
▸ TDP1 Q9NUW8 2/20 0.43
▸ PARP10 Q53GL7 1/20 0.43
▸ SLC1A3 P43003 1/20 0.42
▸ SLC1A2 P43004 1/20 0.42
▸ SLC1A1 P43005 1/20 0.42
▸ CDYL Q9Y232 1/20 0.41
▸ HPGD P15428 1/20 0.41
▸ SIRT5 Q9NXA8 1/20 0.41
▸ KDM4E B2RXH2 1/20 0.41
▸ ALDH1A1 P00352 1/20 0.41
▸ GLA P06280 1/20 0.41
▸ FFAR1 O14842 1/20 0.40
▸ AKR1B1 P15121 1/20 0.40
▸ L3MBTL1 Q9Y468 2/20 0.40
▸ MAPK8 P45983 1/20 0.40
▸ MAPK9 P45984 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12419171 0.86 ATM (0.49) EPHX1ATMKMT2AMEN1TDP1
SCHEMBL18671963 0.85 KDM4E (0.43) HPGDKDM4EALDH1A1GLAL3MBTL1
SCHEMBL18671832 0.85 CDC25B (0.37) KMT2AMEN1KDM4EALDH1A1GLA
SCHEMBL15866033 0.84 KDM4E (0.51) EPHX1ATMKMT2AMEN1TDP1
SCHEMBL18671962 0.84 MMP1 (0.38) KMT2AMEN1HPGDKDM4EALDH1A1
SCHEMBL18671830 0.82 IDO1 (0.35) KDM4EALDH1A1GLAL3MBTL1
SCHEMBL24885715 0.81 EPHX1 (0.48) EPHX1ATMKMT2AMEN1TDP1
SCHEMBL12128701 0.81 EPHX1 (0.48) EPHX1ATMKMT2AMEN1TDP1
SCHEMBL7325131 0.81 TDP1 (0.46) EPHX1ATMKMT2AMEN1TDP1
SCHEMBL18671924 0.80 ALDH1A1 (0.51) KMT2AMEN1TDP1HPGDKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220404701-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-22 — — US disclosed
US-9604921-B2 Sulfonium salt, resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-03-28 — — US disclosed
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