SCHEMBL18671962

SCHEMBL18671962

CCC(C)(I)C(=O)OCc1cccc2c(Cl)cccc12

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ MMP1 P03956 1/20 0.38
▸ MMP2 P08253 1/20 0.38
▸ MMP9 P14780 1/20 0.38
▸ MMP12 P39900 1/20 0.38
▸ MAPT P10636 2/20 0.38
▸ RAB9A P51151 2/20 0.38
▸ NPC1 O15118 1/20 0.38
▸ MAOA P21397 1/20 0.37
▸ MAOB P27338 1/20 0.37
▸ ALDH1A1 P00352 5/20 0.37
▸ CASP3 P42574 3/20 0.37
▸ SENP8 Q96LD8 3/20 0.37
▸ SENP7 Q9BQF6 3/20 0.37
▸ SENP6 Q9GZR1 3/20 0.37
▸ HTT P42858 1/20 0.37
▸ L3MBTL1 Q9Y468 1/20 0.36
▸ LMNA P02545 3/20 0.35
▸ GAA P10253 1/20 0.35
▸ HPGD P15428 1/20 0.34
▸ KDM4E B2RXH2 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12419175 0.86 LMNA (0.41) MMP1MMP2MMP9MMP12MAPT
SCHEMBL18671963 0.85 KDM4E (0.43) MAPTMAOBALDH1A1L3MBTL1LMNA
SCHEMBL18671832 0.85 CDC25B (0.37) ALDH1A1GAAKDM4EGLAKMT2A
SCHEMBL18671843 0.84 EPHX1 (0.45) ALDH1A1L3MBTL1HPGDKDM4EGLA
SCHEMBL18671830 0.80 IDO1 (0.35) MAPTRAB9ANPC1ALDH1A1HTT
SCHEMBL19222211 0.75 ESR1 (0.35) MAPTALDH1A1GAAKDM4EGLA
SCHEMBL20215425 0.73 TYR (0.36) KDM4E
SCHEMBL12330408 0.72 MAOA (0.53) MMP1MMP2MMP9MMP12MAPT
SCHEMBL18671929 0.72 OPRK1 (0.47) MMP1MMP2MMP9MMP12MAPT
SCHEMBL15189314 0.71 CDC25B (0.39) MAPTALDH1A1GAAKDM4EGLA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220404701-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-22 — — US disclosed
US-9604921-B2 Sulfonium salt, resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-03-28 — — US disclosed
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