SCHEMBL18671830

SCHEMBL18671830

CCC(C)(I)C(=O)OCc1ccc(O)c2ccccc12

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ IDO1 P14902 4/20 0.35
▸ CHRM2 P08172 2/20 0.34
▸ CHRM4 P08173 2/20 0.34
▸ CHRM5 P08912 2/20 0.34
▸ CHRM1 P11229 2/20 0.34
▸ CHRM3 P20309 2/20 0.34
▸ CDC25B P30305 1/20 0.34
▸ KDM4E B2RXH2 4/20 0.33
▸ NPC1 O15118 2/20 0.33
▸ EP300 Q09472 1/20 0.33
▸ LDHA P00338 1/20 0.33
▸ BRD4 O60885 1/20 0.33
▸ MITF O75030 1/20 0.33
▸ L3MBTL1 Q9Y468 1/20 0.33
▸ ALOX12 P18054 1/20 0.33
▸ HTT P42858 1/20 0.33
▸ RAB9A P51151 1/20 0.33
▸ NPSR1 Q6W5P4 1/20 0.33
▸ NR3C1 P04150 1/20 0.33
▸ PGR P06401 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18671832 0.92 CDC25B (0.37) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL8737838 0.86 RIPK1 (0.40) IDO1CHRM2CHRM4CHRM5CHRM1
SCHEMBL17901893 0.86 IDO1 (0.37) IDO1CHRM2CHRM4CHRM5CHRM1
SCHEMBL18671843 0.82 EPHX1 (0.45) KDM4EL3MBTL1ALDH1A1GLA
SCHEMBL16705258 0.82 IDO1 (0.35) IDO1CHRM2CHRM4CHRM5CHRM1
SCHEMBL18671963 0.81 KDM4E (0.43) KDM4EL3MBTL1NPSR1GAAMAPT
SCHEMBL19222211 0.81 ESR1 (0.35) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL18671905 0.81 ESR1 (0.42) IDO1CDC25BL3MBTL1NPSR1GAA
SCHEMBL18671962 0.80 MMP1 (0.38) KDM4ENPC1L3MBTL1HTTRAB9A
SCHEMBL20332439 0.80 IDO1 (0.34) IDO1CHRM2CHRM4CHRM5CHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9969829-B2 Polymer compound, negative resist composition, laminate, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 — — US disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 — — US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 — — US disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 — — US disclosed
US-20170210836-A1 POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-27 — — US disclosed
US-9632417-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 — — US disclosed
US-9604921-B2 Sulfonium salt, resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-03-28 — — US disclosed
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