SCHEMBL18802740

SCHEMBL18802740

Cc1cc(C(C)(C)O)c(C(C)(C)O)cc1C(C)(C)O

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ PGK1 P00558 1/20 0.37
▸ PGK2 P07205 1/20 0.37
▸ CYP1A2 P05177 2/20 0.34
▸ CYP2C9 P11712 1/20 0.34
▸ CYP2C19 P33261 1/20 0.34
▸ ALDH1A1 P00352 4/20 0.33
▸ SMN1; SMN2 Q16637 3/20 0.33
▸ CA2 P00918 1/20 0.33
▸ POLB P06746 1/20 0.33
▸ TYR P14679 1/20 0.33
▸ ALOX15 P16050 2/20 0.32
▸ KDM4E B2RXH2 2/20 0.32
▸ MAPT P10636 2/20 0.32
▸ ATP2A2 P16615 1/20 0.32
▸ ATP2A3 Q93084 1/20 0.32
▸ TP53 P04637 1/20 0.31
▸ CYP3A4 P08684 1/20 0.31
▸ TSHR P16473 1/20 0.31
▸ MAPK1 P28482 1/20 0.31
▸ HIF1A Q16665 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15957610 0.94 CYP1A2 (0.37) PGK1PGK2CYP1A2CYP2C9CYP2C19
SCHEMBL10538178 0.92 PGK1 (0.43) PGK1PGK2CYP1A2CYP2C9CYP2C19
SCHEMBL18802760 0.85 ALDH1A1 (0.40) CYP1A2CYP2C9CYP2C19ALDH1A1SMN1; SMN2
SCHEMBL18802722 0.77 JAK2 (0.38) CYP1A2CYP2C9CYP2C19ALDH1A1SMN1; SMN2
SCHEMBL16838070 0.77 PGK1 (0.42) PGK1PGK2SMN1; SMN2
SCHEMBL18802725 0.77 LMNA (0.42) CA2POLBALOX15TP53CYP3A4
SCHEMBL18802768 0.72 ALOX15 (0.57) CYP1A2CYP2C9CYP2C19ALDH1A1SMN1; SMN2
SCHEMBL12180439 0.72 TDP1 (0.46) CYP1A2ALDH1A1SMN1; SMN2CA2POLB
SCHEMBL12051655 0.72 CYP1A2 (0.31) CYP1A2CYP2C9CYP2C19ALDH1A1SMN1; SMN2
SCHEMBL9272585 0.72 ESR1 (0.41) ALDH1A1TYRALOX15CYP3A4TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170121437-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK FUJIFILM CORPORATION (JP) 2017-05-04 — — US disclosed
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