SCHEMBL18802918

SCHEMBL18802918

CC(C)(O)c1cc(OCc2ccc(COc3cc(C(C)(C)O)cc(C(C)(C)O)c3)cc2)cc(C(C)(C)O)c1

nearest known ligand 0.50

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
▸ APP P05067 4/20 0.46
▸ MAOB P27338 5/20 0.46
▸ NR4A2 P43354 2/20 0.45
▸ RXRA P19793 1/20 0.45
▸ RXRB P28702 1/20 0.45
▸ NR4A1 P22736 1/20 0.44
▸ NR4A3 Q92570 1/20 0.44
▸ PTPN2 P17706 2/20 0.40
▸ PTPN1 P18031 2/20 0.40
▸ PTPRB P23467 2/20 0.40
▸ PTPN6 P29350 2/20 0.40
▸ PTPN11 Q06124 2/20 0.40
▸ PTPRC P08575 1/20 0.40
▸ CDC25A P30304 1/20 0.40
▸ MEN1 O00255 1/20 0.40
▸ KMT2A Q03164 1/20 0.40
▸ PPARG P37231 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18811515 0.93 RXRA (0.47) APPMAOBNR4A2RXRARXRB
SCHEMBL5164170 0.91 MEN1 (0.51) MAOBNR4A2NR4A1NR4A3MEN1
SCHEMBL24533738 0.90 MAOB (0.38) APPMAOBNR4A2RXRARXRB
SCHEMBL24533723 0.82 APP (0.61) APPMAOBNR4A2RXRARXRB
SCHEMBL26575146 0.79 RXRA (0.35) MAOBRXRARXRBPTPN1PTPRC
SCHEMBL9270383 0.78 NQO1 (0.42) RXRARXRB
SCHEMBL9434943 0.78 MAOB (0.58) MAOBNR4A2NR4A1NR4A3
SCHEMBL9342676 0.77 TUBB1 (0.61) APPMAOBNR4A2RXRARXRB
SCHEMBL24533757 0.77 APP (0.50) APPMAOBNR4A2RXRARXRB
SCHEMBL24533749 0.76 HRH3 (0.32) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170121437-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK FUJIFILM CORPORATION (JP) 2017-05-04 — — US disclosed
US-20170121437-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK FUJIFILM CORPORATION (JP) 2017-05-04 — — US disclosed
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