SCHEMBL18905392

SCHEMBL18905392

C/C=C\c1ccc(OC[SiH3])cc1

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 3/20 0.57
▸ LMNA P02545 2/20 0.57
▸ CYP3A4 P08684 2/20 0.57
▸ TP53 P04637 1/20 0.57
▸ TSHR P16473 1/20 0.57
▸ KDM4E B2RXH2 1/20 0.57
▸ RELA Q04206 1/20 0.46
▸ MAPT P10636 2/20 0.44
▸ HPGD P15428 2/20 0.44
▸ HTT P42858 1/20 0.44
▸ L3MBTL1 Q9Y468 1/20 0.44
▸ ESR1 P03372 2/20 0.41
▸ AHR P35869 1/20 0.41
▸ APP P05067 7/20 0.40
▸ CYP1A2 P05177 1/20 0.40
▸ THPO P40225 1/20 0.40
▸ HIF1A Q16665 1/20 0.40
▸ CHRNB4 P30926 1/20 0.40
▸ CHRNA3 P32297 1/20 0.40
▸ CHRNA7 P36544 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18905460 0.82 ALDH1A1 (0.52) ALDH1A1LMNACYP3A4TP53TSHR
SCHEMBL10601858 0.81 RELA (0.68) ALDH1A1LMNACYP3A4TP53TSHR
SCHEMBL10601861 0.81 RELA (0.68) ALDH1A1LMNACYP3A4TP53TSHR
SCHEMBL18911077 0.81 RELA (0.68) ALDH1A1LMNACYP3A4TP53TSHR
SCHEMBL18905531 0.80 RELA (0.47) ALDH1A1LMNACYP3A4TP53KDM4E
SCHEMBL9860997 0.79 ALDH1A1 (0.57) ALDH1A1LMNACYP3A4TP53TSHR
SCHEMBL9860994 0.79 ALDH1A1 (0.57) ALDH1A1LMNACYP3A4TP53TSHR
SCHEMBL9860945 0.78 ALDH1A1 (0.55) ALDH1A1LMNACYP3A4TP53TSHR
SCHEMBL13757288 0.78 AHR (0.62) ALDH1A1LMNACYP3A4TP53TSHR
SCHEMBL12203894 0.78 ALDH1A1 (0.61) ALDH1A1LMNACYP3A4TP53TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170154766-A1 SILICON-CONTAINING CONDENSATE, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-01 — — US disclosed
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