SCHEMBL18924276

SCHEMBL18924276

CC1CC2CCCC(C(=O)OCC(CNSC(F)(F)F)OC(=O)C3(C)CC4CCCC(C4)C3)(C1)C2

nearest known ligand 0.39

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
PRKCA P17252 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26085386 1.00 PRKCA (0.39) PRKCA
SCHEMBL21367461 0.88
SCHEMBL26379738 0.85 PRKCA (0.30) PRKCA
SCHEMBL25704843 0.84 PRKCA (0.39) PRKCA
SCHEMBL23420071 0.82 PRKCA (0.31) PRKCA
SCHEMBL25803800 0.78 PRKCA (0.60) PRKCA
SCHEMBL21135616 0.74 EPHX2 (0.31)
SCHEMBL24360864 0.74 PRKCA (0.43) PRKCA
SCHEMBL22517134 0.70 NPSR1 (0.43) PRKCA
SCHEMBL19719269 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11635686-B2 Resist composition, method of forming resist pattern, and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-25 US disclosed
US-20220411727-A1 CLEANING COMPOSITION, METHOD OF CLEANING COATING FILM FORMING DEVICE, METHOD OF PRODUCING SUBSTRATE FOR LITHOGRAPHY, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-12-29 US disclosed
US-20220206384-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-06-30 US disclosed
US-20220179306-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-06-09 US disclosed
US-20220107565-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-04-07 US disclosed
US-20220011666-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND RESIN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-01-13 US disclosed
US-11221557-B2 Resist composition, method of forming resist pattern, compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2022-01-11 US disclosed
US-20200159119-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-05-21 US disclosed
US-20190354011-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2019-11-21 US disclosed
US-10414918-B2 Method of preparing polymer compound TOKYO OHKA KOGYO CO., LTD. (JP) 2019-09-17 US disclosed
US-10394122-B2 Resist composition, method for forming resist pattern, compound, and acid generator TOYKO OHKA KOGYO CO., LTD. (JP) 2019-08-27 US disclosed
US-20190196329-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2019-06-27 US disclosed
US-10241406-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2019-03-26 US disclosed
US-20180022916-A1 METHOD OF PREPARING POLYMER COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2018-01-25 US disclosed
US-9690194-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-27 US disclosed
US-9682951-B2 Resist composition, method of forming resist pattern, acid generator, photoreactive quencher, and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-20 US disclosed
US-9671690-B2 Resist composition, method for forming resist pattern, photo-reactive quencher and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10241406-B2 Resist composition and method for forming resist pattern RB1, CHD1, SMARCA1 PRKCA 3733/4885
US-11635686-B2 Resist composition, method of forming resist pattern, and compound FXR1, HNRNPA1, RBM3 PRKCA 4552/4885
US-10394122-B2 Resist composition, method for forming resist pattern, compound, and acid generator RB1, FXR1, CCNA1 PRKCA 2391/4885
US-11221557-B2 Resist composition, method of forming resist pattern, compound, and acid generator RER1, GRM1, RRS1 PRKCA 4206/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.