SCHEMBL1897705

SCHEMBL1897705

C=Cc1ccccc1C(=O)OC(C)OC(C)C

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 2/20 0.39
CYP3A4 P08684 1/20 0.39
DHODH Q02127 2/20 0.36
ALDH1A1 P00352 5/20 0.36
TSHR P16473 2/20 0.36
HSD17B10 Q99714 2/20 0.35
SCN1A P35498 1/20 0.35
SCN2A Q99250 1/20 0.35
SCN3A Q9NY46 1/20 0.35
IRAK4 Q9NWZ3 1/20 0.34
PDCD1 Q15116 1/20 0.34
CD274 Q9NZQ7 1/20 0.34
KDM4E B2RXH2 2/20 0.34
LMNA P02545 1/20 0.34
CYP1A2 P05177 1/20 0.34
CYP2C9 P11712 1/20 0.34
CYP2C19 P33261 1/20 0.34
HPGD P15428 1/20 0.34
CA12 O43570 3/20 0.33
CA1 P00915 3/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL820636 0.87 NPC1 (0.50) NPC1CYP3A4DHODHALDH1A1TSHR
SCHEMBL1895797 0.86 NPC1 (0.37) NPC1CYP3A4DHODHALDH1A1TSHR
SCHEMBL1897090 0.86 ALDH1A1 (0.39) NPC1CYP3A4ALDH1A1TSHRHSD17B10
SCHEMBL29030417 0.84 ALDH1A1 (0.40) NPC1CYP3A4DHODHALDH1A1TSHR
SCHEMBL1897725 0.82 TSHR (0.40) NPC1CYP3A4ALDH1A1TSHRHSD17B10
SCHEMBL1899421 0.82 NPC1 (0.35) NPC1CYP3A4DHODHALDH1A1TSHR
SCHEMBL1896072 0.81 NPC1 (0.38) NPC1CYP3A4DHODHALDH1A1TSHR
SCHEMBL1896552 0.81 ALDH1A1 (0.46) NPC1CYP3A4ALDH1A1TSHRHSD17B10
SCHEMBL1902387 0.80 ALDH1A1 (0.43) NPC1CYP3A4ALDH1A1TSHRHSD17B10
SCHEMBL1897238 0.78 SCN1A (0.36) NPC1CYP3A4ALDH1A1TSHRHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed