Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Methane. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Methane SCHEMBL23235271 | 1.00 | — | — | |
| Methane SCHEMBL28677866 | 0.87 | — | — | |
| Methane SCHEMBL28886332 | 0.87 | — | — | |
| Methane SCHEMBL29030770 | 0.87 | — | — | |
| Methane SCHEMBL25421868 | 0.87 | — | — | |
| Methane SCHEMBL19205777 | 0.87 | — | — | |
| Methane SCHEMBL28839567 | 0.87 | — | — | |
| Methane SCHEMBL28731863 | 0.87 | — | — | |
| Methane SCHEMBL28689116 | 0.87 | — | — | |
| Methane SCHEMBL27970802 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 170 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11876233-B2 | Thin film battery stacking | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2024-01-16 | — | — | US | claimed |
| US-11592394-B2 | Methods and systems for transmission and detection of free radicals | WISCONSIN ALUMNI RESEARCH FOUNDATION (US) | 2023-02-28 | — | — | US | claimed |
| CN-115064577-A | GaN-based heterojunction transverse Schottky diode and preparation method thereof | 西安电子科技大学 | 2022-09-16 | — | — | CN | claimed |
| CN-113851466-B | Isolation capacitor and preparation method thereof | 北京智芯微电子科技有限公司 | 2022-03-22 | — | — | CN | claimed |
| CN-113851466-A | Isolation capacitor and preparation method thereof | 北京智芯微电子科技有限公司 | 2021-12-28 | — | — | CN | claimed |
| CN-113667976-A | Corrosion-resistant DLC film with hole sealing top layer and preparation method thereof | 中国科学院兰州化学物理研究所 | 2021-11-19 | — | — | CN | claimed |
| US-10957786-B2 | FinFET with reduced extension resistance and methods of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-03-23 | — | — | US | claimed |
| US-10930768-B2 | Low current leakage finFET and methods of making the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-02-23 | — | — | US | claimed |
| US-20200127125-A1 | LOW CURRENT LEAKAGE FINFET AND METHODS OF MAKING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-04-23 | — | — | US | claimed |
| US-20200127123-A1 | FINFET WITH REDUCED EXTENSION RESISTANCE AND METHODS OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-04-23 | — | — | US | claimed |
| CN-105293500-B | A kind of preparation method of silica carbon aerogels | 天津大学 | 2018-01-12 | — | — | CN | claimed |
| US-9700872-B1 | Superpolar chromatographic stationary phases and extraction sorbents and their methods of synthesis | THE FLORIDA INTERNATIONAL UNIVERSITY BOARD OF TRUSTEES (US) | 2017-07-11 | — | — | US | claimed |
| CN-106609055-A | Baking varnish | 天津市新丽华色材有限责任公司 | 2017-05-03 | — | — | CN | claimed |
| CN-103805983-A | Surface treatment method for permanent magnet material by adopting phosphorization agent to carry out phosphorization treatment | BEIJING ZHONG KE SAN HUAN | 2014-05-21 | — | — | CN | claimed |
| CN-101483171-B | Airgap-containing interconnect structure with patternable low-K material and method of fabricating | IBM | 2011-04-06 | — | — | CN | claimed |
| CN-100552890-C | The method of electronic structure and formation deielectric-coating | IBM (US) | 2009-10-21 | — | — | CN | claimed |
| CN-101483171-A | Airgap-containing interconnect structure with patternable low-K material and method of fabricating | IBM (US) | 2009-07-15 | — | — | CN | claimed |
| CN-100485004-C | Ink composition for ink jet recording | SEIKO EPSON CORP (JP) | 2009-05-06 | — | — | CN | claimed |
| CN-101101875-A | Electronic structure and method for forming medium film | IBM (US) | 2008-01-09 | — | — | CN | claimed |
| CN-1807525-A | Ink composition for ink jet recording | SEIKO EPSON CORP (JP) | 2006-07-26 | — | — | CN | claimed |