SCHEMBL1947743

SCHEMBL1947743

O=S(=O)(O)C(F)(F)C(F)CCO

nearest known ligand 0.31

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2939812 0.98 ALDH1A1 (0.30) ALDH1A1L3MBTL1
SCHEMBL13721474 0.98 ALDH1A1 (0.30) ALDH1A1L3MBTL1
SCHEMBL28633862 0.82 ALDH1A1 (0.31) ALDH1A1L3MBTL1
SCHEMBL2392008 0.81 ALDH1A1 (0.33) ALDH1A1L3MBTL1
SCHEMBL24776180 0.80 ALDH1A1 (0.30) ALDH1A1L3MBTL1
SCHEMBL3139960 0.80 TP53 (0.32) ALDH1A1L3MBTL1
Ammonia Solution, Strong SCHEMBL28635838 0.80 ALDH1A1 (0.30) ALDH1A1L3MBTL1
SCHEMBL12542079 0.80
SCHEMBL2390460 0.79 ALDH1A1 (0.32) ALDH1A1L3MBTL1
SCHEMBL2390451 0.79 ALDH1A1 (0.32) ALDH1A1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024043121-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND AND INTERMEDIATE THEREFOR 東京応化工業株式会社 2024-02-29 WO disclosed
WO-2023171670-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND 東京応化工業株式会社 2023-09-14 WO disclosed
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
WO-2022265034-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING COMPOUNDS, INTERMEDIATE, AND COMPOUNDS 東京応化工業株式会社 2022-12-22 WO disclosed
US-11067888-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2021-07-20 US disclosed
US-20200257197-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-08-13 US disclosed
US-20190196329-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2019-06-27 US disclosed
US-20180149973-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2018-05-31 US disclosed
US-20180011401-A1 SULFONIC ACID DERIVATIVE, PHOTOACID GENERATOR USING SAME, RESIST COMPOSITION, AND DEVICE MANUFACTURING METHOD TOYO GOSEI CO., LTD. (JP) 2018-01-11 US disclosed
US-9714217-B2 Sulfonic acid derivative and photoacid generator TOYO GOSEI CO., LTD. (JP) 2017-07-25 US disclosed
US-9714217-B2 Sulfonic acid derivative and photoacid generator TOYO GOSEI CO., LTD. (JP) 2017-07-25 US disclosed
US-8349990-B2 Chain scission polyester polymers for photoresists THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK (US) 2013-01-08 US disclosed
US-20120289738-A1 SULFONIC ACID DERIVATIVE AND PHOTOACID GENERATOR TOYO GOSEI CO., LTD. (JP) 2012-11-15 US disclosed
US-20110127651-A1 CHAIN SCISSION POLYESTER POLYMERS FOR PHOTORESISTS THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW (US) 2011-06-02 US disclosed
US-7833690-B2 Photoacid generators and lithographic resists comprising the same THE UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE (US) 2010-11-16 US disclosed
WO-2009105667-A2 CHAIN SCISSION POLYESTER POLYMERS FOR PHOTORESISTS THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK (US) 2009-08-27 WO disclosed
US-20070117043-A1 Photoacid generators and lithographic resists comprising the same NATIONAL SCIENCE FOUNDATION 2007-05-24 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180011401-A1 SULFONIC ACID DERIVATIVE, PHOTOACID GENERATOR USING SAME, RESIST COMPOSITION, AND DEVICE MANUFACTURING METHOD ASIC1, ASIC3, CRY1 ALDH1A1 565/4885L3MBTL1 4346/4885
US-20180149973-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR MCM4, RFC4, ATP1A4 ALDH1A1 2391/4885L3MBTL1 4353/4885
US-20120289738-A1 SULFONIC ACID DERIVATIVE AND PHOTOACID GENERATOR CRY1, ASIC1, ASIC3 ALDH1A1 461/4885L3MBTL1 3903/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.