SCHEMBL19599641

SCHEMBL19599641

COC(=O)c1ccccc1Sc1ccc(C(C)(C)C)cc1

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A9 P48067 1/20 0.49
MAPT P10636 4/20 0.49
HSD17B10 Q99714 2/20 0.49
POLB P06746 2/20 0.49
PKLR P30613 1/20 0.47
NPSR1 Q6W5P4 1/20 0.46
SIRT1 Q96EB6 1/20 0.44
TSHR P16473 2/20 0.44
LMNA P02545 1/20 0.44
CHRM2 P08172 1/20 0.43
CHRM1 P11229 1/20 0.43
CHRM3 P20309 1/20 0.43
TDP1 Q9NUW8 2/20 0.43
L3MBTL1 Q9Y468 2/20 0.43
HTT P42858 1/20 0.43
ALDH1A1 P00352 1/20 0.42
CFTR P13569 1/20 0.42
KMT2A Q03164 1/20 0.42
HTR1A P08908 1/20 0.42
HTR3A P46098 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5887723 0.84 SIRT1 (0.61) MAPTHSD17B10POLBPKLRSIRT1
SCHEMBL14176672 0.83 MAPT (0.56) SLC6A9MAPTHSD17B10POLBPKLR
SCHEMBL19599640 0.83 SLC6A9 (0.52) SLC6A9MAPTPOLBSIRT1LMNA
SCHEMBL6934406 0.83 HSD17B10 (0.53) MAPTHSD17B10POLBPKLRSIRT1
SCHEMBL4440485 0.81 HSD17B10 (0.64) MAPTHSD17B10POLBPKLRTSHR
SCHEMBL12772114 0.79 ALDH1A1 (0.51) MAPTHSD17B10POLBPKLRSIRT1
SCHEMBL28189180 0.79 SIRT1 (0.54) MAPTHSD17B10POLBPKLRSIRT1
SCHEMBL18795749 0.78 MAPT (0.43) MAPTHSD17B10POLBPKLRNPSR1
SCHEMBL2954723 0.77 SMN1; SMN2 (0.58) MAPTHSD17B10POLBPKLRLMNA
SCHEMBL4802025 0.76 MAPT (0.55) MAPTHSD17B10POLBPKLRNPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10416558-B2 Positive resist composition, resist pattern forming process, and photomask blank SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-09-17 US disclosed
US-10248022-B2 Sulfonium compound, making method, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-04-02 US disclosed
EP-3279734-B1 POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK SHINETSU CHEMICAL CO (JP) 2018-07-25 EP disclosed
US-20180039175-A1 NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-08 US disclosed
US-20180039175-A1 NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-08 US disclosed
US-20180039177-A1 POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-08 US disclosed
US-20180039177-A1 POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-08 US disclosed
EP-3279729-A1 NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2018-02-07 EP disclosed
US-20170329227-A1 NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-16 US disclosed
US-20170329227-A1 NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10416558-B2 Positive resist composition, resist pattern forming process, and photomask blank LRRC47, SLIRP, COPE SLC6A9 504/4885MAPT 1923/4885HSD17B10 3986/4885
US-10248022-B2 Sulfonium compound, making method, resist composition, and pattern forming process HNRNPU, C1R, LBR SLC6A9 996/4885MAPT 4401/4885HSD17B10 2326/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.