Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SIRT1 | Q96EB6 | 1/20 | 0.61 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.57 |
| ▸ | POLB | P06746 | 2/20 | 0.57 |
| ▸ | MAPT | P10636 | 4/20 | 0.56 |
| ▸ | PKLR | P30613 | 1/20 | 0.54 |
| ▸ | TSHR | P16473 | 3/20 | 0.52 |
| ▸ | LMNA | P02545 | 1/20 | 0.52 |
| ▸ | L3MBTL1 | Q9Y468 | 3/20 | 0.51 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.50 |
| ▸ | CFTR | P13569 | 1/20 | 0.50 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.49 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.49 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.49 |
| ▸ | ATM | Q13315 | 1/20 | 0.49 |
| ▸ | HTT | P42858 | 1/20 | 0.48 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.48 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.47 |
| ▸ | PABPC1 | P11940 | 1/20 | 0.47 |
| ▸ | EIF4H | Q15056 | 1/20 | 0.47 |
| ▸ | MEN1 | O00255 | 1/20 | 0.47 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28189180 | 0.94 | SIRT1 (0.54) | SIRT1HSD17B10POLBMAPTPKLR | |
| SCHEMBL4440485 | 0.89 | HSD17B10 (0.64) | HSD17B10POLBMAPTPKLRTSHR | |
| SCHEMBL6934406 | 0.88 | HSD17B10 (0.53) | SIRT1HSD17B10POLBMAPTPKLR | |
| SCHEMBL14176672 | 0.88 | MAPT (0.56) | SIRT1HSD17B10POLBMAPTPKLR | |
| SCHEMBL6934243 | 0.84 | SMN1; SMN2 (0.50) | SIRT1HSD17B10POLBMAPTPKLR | |
| SCHEMBL19599641 | 0.84 | SLC6A9 (0.49) | SIRT1HSD17B10POLBMAPTPKLR | |
| SCHEMBL12772114 | 0.84 | ALDH1A1 (0.51) | SIRT1HSD17B10POLBMAPTPKLR | |
| SCHEMBL9323438 | 0.83 | HSD17B10 (0.48) | SIRT1HSD17B10POLBMAPTTSHR | |
| SCHEMBL4802025 | 0.83 | MAPT (0.55) | SIRT1HSD17B10POLBMAPTPKLR | |
| SCHEMBL11665329 | 0.82 | ALDH1A1 (0.55) | SIRT1HSD17B10MAPTPKLRTSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10416558-B2 | Positive resist composition, resist pattern forming process, and photomask blank | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-09-17 | — | — | US | disclosed |
| US-10248022-B2 | Sulfonium compound, making method, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-04-02 | — | — | US | disclosed |
| EP-3279734-B1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHINETSU CHEMICAL CO (JP) | 2018-07-25 | — | — | EP | disclosed |
| US-20180039175-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-20180039175-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-20180039177-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-20180039177-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| EP-3279729-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2018-02-07 | — | — | EP | disclosed |
| EP-3279734-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | Shin-Etsu Chemical Co., Ltd. (JP) | 2018-02-07 | — | — | EP | disclosed |
| US-20170329227-A1 | NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-11-16 | — | — | US | disclosed |
| US-20170329227-A1 | NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-11-16 | — | — | US | disclosed |
| CN-101687781-B | Compound for photoacid generator and use its anti-corrosion agent composition, pattern formation method | CENTRAL GLASS CO.,LTD. (JP) | 2015-08-12 | — | — | CN | disclosed |
| EP-2325190-B1 | Composition for charge-transporting film and ion compound, charge-transporting film and organic electroluminescent device using same | MITSUBISHI CHEM CORP (JP) | 2013-05-08 | — | — | EP | disclosed |
| CN-101687781-A | Compound for photoacid generator, resist composition using the same, and pattern-forming method | CENTRAL GLASS CO LTD | 2010-03-31 | — | — | CN | disclosed |
| US-20080070963-A1 | Compositions and methods for promoting neural regeneration | Neuberger, Timothy | 2008-03-20 | — | — | US | disclosed |
| US-7271187-B2 | Compositions and methods for promoting tissue regeneration | Neuberger, Tim (US) | 2007-09-18 | — | — | US | disclosed |
| US-7112697-B1 | Methods for formation of aryl-sulfur and aryl-selenium compounds using copper(I) catalysts | UNIVERSITY OF MASSACHUSETTS (US) | 2006-09-26 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080070963-A1 | Compositions and methods for promoting neural regeneration | GAP43, DCX, BDNF | SIRT1 2570/4885HSD17B10 1213/4885POLB 3014/4885 |
| US-10416558-B2 | Positive resist composition, resist pattern forming process, and photomask blank | LRRC47, SLIRP, COPE | SIRT1 4786/4885HSD17B10 3986/4885POLB 204/4885 |
| US-10248022-B2 | Sulfonium compound, making method, resist composition, and pattern forming process | HNRNPU, C1R, LBR | SIRT1 4632/4885HSD17B10 2326/4885POLB 2111/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.