SCHEMBL1963777

SCHEMBL1963777

CCCc1nc(CC(C)O)c(C(=O)OCC)[nH]1

nearest known ligand 0.41

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.40
HTT P42858 3/20 0.40
HPGD P15428 2/20 0.40
KDM4E B2RXH2 2/20 0.40
RECQL P46063 1/20 0.40
LMNA P02545 3/20 0.39
CYP1A2 P05177 1/20 0.39
CYP2C9 P11712 1/20 0.39
CYP2C19 P33261 1/20 0.39
HSP90AA1 P07900 1/20 0.36
SMN1; SMN2 Q16637 3/20 0.36
TSHR P16473 2/20 0.35
POLB P06746 1/20 0.34
KMT2A Q03164 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34
MAPK1 P28482 1/20 0.34
MAPT P10636 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1969217 0.86 TUBB4A (0.34) ALDH1A1KDM4ELMNATSHRMAPK1
SCHEMBL4356883 0.84 ALDH1A1 (0.49) ALDH1A1HTTHPGDKDM4ERECQL
SCHEMBL1444895 0.83 ALDH1A1 (0.44) ALDH1A1HTTHPGDKDM4ERECQL
SCHEMBL8566438 0.81 ALDH1A1 (0.42) ALDH1A1HTTHPGDKDM4ERECQL
SCHEMBL4371738 0.81 CYP1A2 (0.44) ALDH1A1HTTHPGDKDM4ERECQL
SCHEMBL8562993 0.79 ALDH1A1 (0.43) ALDH1A1HTTHPGDKDM4ERECQL
SCHEMBL9308574 0.79 ALDH1A1 (0.43) ALDH1A1HTTHPGDKDM4ERECQL
SCHEMBL9310221 0.79 ALDH1A1 (0.43) ALDH1A1HTTHPGDKDM4ERECQL
SCHEMBL5809049 0.78 ALDH1A1 (0.47) ALDH1A1HTTHPGDKDM4ERECQL
SCHEMBL1275935 0.77 ALDH1A1 (0.46) ALDH1A1HTTHPGDKDM4ERECQL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11935803-B2 Resin composition, laminate, semiconductor wafer with resin composition layer, substrate for mounting semiconductor with resin composition layer and semiconductor device MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-03-19 US disclosed
CN-112004845-B Resin composition, laminate, semiconductor wafer with resin composition layer, substrate, and semiconductor device 三菱瓦斯化学株式会社 2022-05-31 CN disclosed
US-20210277221-A1 RESIN COMPOSITION, LAMINATE, SEMICONDUCTOR WAFER WITH RESIN COMPOSITION LAYER, SUBSTRATE FOR MOUNTING SEMICONDUCTOR WITH RESIN COMPOSITION LAYER AND SEMICONDUCTOR DEVICE MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-09-09 US disclosed
EP-3786200-A1 RESIN COMPOSITION, LAMINATE, RESIN COMPOSITION LAYER-ATTACHED SEMICONDUCTOR WAFER, SUBSTRATE FOR MOUNTING RESIN COMPOSITION LAYER-ATTACHED SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-03 EP disclosed
CN-112004845-A Resin composition, laminate, semiconductor wafer with resin composition layer, substrate for mounting semiconductor with resin composition layer, and semiconductor device 三菱瓦斯化学株式会社 2020-11-27 CN disclosed
EP-2334668-A1 PROCESS FOR PREPARING OLMESARTAN MEDOXOMIL INTERMEDIATE Krka Tovarna Zdravil, D.D., Novo Mesto (SI) 2011-06-22 EP disclosed
WO-2010026255-A1 PROCESS FOR PREPARING OLMESARTAN MEDOXOMIL INTERMEDIATE KRKA, TOVARNA ZDRAVIL, D.D., NOVO MESTO (SI) 2010-03-11 WO disclosed
WO-2007148344-A2 PROCESS FOR THE PREPARATION OF OLMESARTAN MEDOXOMIL MATRIX LABORATORIES LIMITED (IN) 2007-12-27 WO disclosed