SCHEMBL19678501

SCHEMBL19678501

O=C(O)C1CCC(C(=O)Oc2c(I)cc(I)cc2I)CC1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ELANE P08246 2/20 0.37
▸ KMT2A Q03164 2/20 0.37
▸ HTT P42858 1/20 0.37
▸ SMN1; SMN2 Q16637 1/20 0.37
▸ TDP1 Q9NUW8 1/20 0.37
▸ GABRP O00591 1/20 0.34
▸ GABRD O14764 1/20 0.34
▸ GABRA1 P14867 1/20 0.34
▸ TSHR P16473 1/20 0.34
▸ GABRB1 P18505 1/20 0.34
▸ GABRG2 P18507 1/20 0.34
▸ GABRB3 P28472 1/20 0.34
▸ GABRA5 P31644 1/20 0.34
▸ GABRA3 P34903 1/20 0.34
▸ GABRA2 P47869 1/20 0.34
▸ GABRB2 P47870 1/20 0.34
▸ GABRA4 P48169 1/20 0.34
▸ GABRE P78334 1/20 0.34
▸ PMP22 Q01453 1/20 0.34
▸ GABRA6 Q16445 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21705618 0.85 KMT2A (0.36) ELANEKMT2AHTTSMN1; SMN2TDP1
SCHEMBL21705622 0.83 GABRP (0.38) KMT2AHTTSMN1; SMN2TDP1GABRP
SCHEMBL21705623 0.80 SLC6A4 (0.37) KMT2AHTTSMN1; SMN2TDP1MEN1
SCHEMBL21711248 0.78 HTT (0.31) KMT2AHTTSMN1; SMN2TDP1HPGD
SCHEMBL19678524 0.78 GRM4 (0.38) KMT2AHTTSMN1; SMN2TDP1L3MBTL1
SCHEMBL22097556 0.77 ACACB (0.36) KMT2AHTTSMN1; SMN2TDP1POLB
SCHEMBL24632264 0.76 GABRP (0.32) GABRPGABRDGABRA1TSHRGABRB1
SCHEMBL19846256 0.76 — —
SCHEMBL19846331 0.76 HTT (0.32) KMT2AHTT
SCHEMBL27541704 0.75 KMT2A (0.59) ELANEKMT2AHTTSMN1; SMN2TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 — — US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 — — US disclosed
US-20230273519-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2023-08-31 — — US disclosed
US-20230273519-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2023-08-31 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20220026803-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-27 — — US disclosed
US-11204553-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-12-21 — — US disclosed
US-10809617-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-20 — — US disclosed
US-20200241418-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-30 — — US disclosed
US-20200192222-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-06-18 — — US disclosed
US-20200050104-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-02-13 — — US disclosed
US-20190155155-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-05-23 — — US disclosed
US-10295904-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-05-21 — — US disclosed
US-20180088463-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-29 — — US disclosed
US-20180088463-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-29 — — US disclosed
US-20180081267-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 — — US disclosed
US-20180081267-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 — — US disclosed
US-20170351177-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-07 — — US disclosed
US-20170351177-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-07 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10809617-B2 Resist composition and patterning process INSR, EWSR1, INSRR ELANE 1949/4885KMT2A 1725/4885HTT 788/4885
US-20190155155-A1 RESIST COMPOSITION AND PATTERNING PROCESS INSR, EWSR1, INSRR ELANE 1949/4885KMT2A 1725/4885HTT 788/4885
US-20170351177-A1 RESIST COMPOSITION AND PATTERNING PROCESS INSR, EWSR1, INSRR ELANE 1949/4885KMT2A 1725/4885HTT 788/4885
US-10295904-B2 Resist composition and patterning process INSR, EWSR1, INSRR ELANE 1949/4885KMT2A 1725/4885HTT 788/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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