SCHEMBL22097556

SCHEMBL22097556

CS(=O)(=O)NC(=O)C1CCC(C(=O)Oc2c(I)cc(I)cc2I)CC1

nearest known ligand 0.36

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ ACACB O00763 1/20 0.36
▸ PCNA P12004 1/20 0.33
▸ VCP P55072 1/20 0.33
▸ POLB P06746 3/20 0.33
▸ NLRP3 Q96P20 1/20 0.33
▸ AKR1C3 P42330 1/20 0.32
▸ HSD17B10 Q99714 1/20 0.31
▸ STS P08842 1/20 0.31
▸ TP53 P04637 1/20 0.31
▸ MAPT P10636 2/20 0.30
▸ GAA P10253 1/20 0.30
▸ HIF1A Q16665 1/20 0.30
▸ HTT P42858 1/20 0.30
▸ KMT2A Q03164 1/20 0.30
▸ SMN1; SMN2 Q16637 1/20 0.30
▸ TDP1 Q9NUW8 1/20 0.30
▸ ENPP3 O14638 1/20 0.30
▸ ENPP1 P22413 1/20 0.30
▸ SCN9A Q15858 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22097561 0.82 PCNA (0.32) PCNAPOLBNLRP3GAAKMT2A
SCHEMBL22097570 0.80 PCNA (0.32) PCNAPOLBNLRP3SCN9A
SCHEMBL25479241 0.77 VCP (0.35) ACACBVCPSCN9A
SCHEMBL19678501 0.77 ELANE (0.37) POLBNLRP3HTTKMT2ASMN1; SMN2
SCHEMBL21705618 0.76 KMT2A (0.36) POLBNLRP3MAPTHTTKMT2A
SCHEMBL26343839 0.75 PCNA (0.39) PCNAPOLBNLRP3
SCHEMBL25475723 0.74 LMNA (0.36) PCNAPOLBGAAKMT2ASMN1; SMN2
SCHEMBL22097512 0.74 ACACB (0.33) ACACBVCPPOLBNLRP3HSD17B10
SCHEMBL21705622 0.74 GABRP (0.38) POLBNLRP3HTTKMT2ASMN1; SMN2
SCHEMBL21705623 0.73 SLC6A4 (0.37) POLBNLRP3HTTKMT2ASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 — — US disclosed
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 — — US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 — — US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 — — US disclosed
US-20230305394-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 — — US disclosed
US-20230305393-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 — — US disclosed
US-20230305394-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 — — US disclosed
US-20230305393-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-11269253-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-03-08 — — US disclosed
US-20200393760-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-12-17 — — US disclosed
US-20200285149-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-09-10 — — US disclosed
US-20200192222-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-06-18 — — US disclosed
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