SCHEMBL1968084

SCHEMBL1968084

COC(Cc1ccccc1)[Si](OC)(OC)OC

nearest known ligand 0.45

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 4/20 0.42
SIGMAR1 Q99720 4/20 0.42
SLC6A2 P23975 3/20 0.42
SLC6A4 P31645 2/20 0.42
SLC6A3 Q01959 2/20 0.42
MAOA P21397 1/20 0.42
CYP2A6 P11509 1/20 0.42
ADORA2A P29274 1/20 0.42
ADORA1 P30542 1/20 0.42
EPHX1 P07099 1/20 0.40
SLC18A2 Q05940 1/20 0.39
CYP2D6 P10635 1/20 0.39
LAP3 P28838 1/20 0.39
TRPA1 O75762 2/20 0.38
PPARG P37231 1/20 0.37
PPARA Q07869 1/20 0.37
CYP1A2 P05177 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1972957 0.83 TAAR1 (0.38) TAAR1SIGMAR1SLC6A2SLC6A4SLC6A3
SCHEMBL1970396 0.80 TAAR1 (0.42) TAAR1SIGMAR1SLC6A2SLC6A4SLC6A3
SCHEMBL1730609 0.79 TAAR1 (0.50) TAAR1SIGMAR1SLC6A2SLC6A4SLC6A3
SCHEMBL1973015 0.79 ALDH1A1 (0.43) LAP3PPARGPPARACYP1A2
SCHEMBL10696904 0.78 SIGMAR1 (0.48) TAAR1SIGMAR1SLC6A2SLC6A4SLC6A3
Ammonia Solution, Strong SCHEMBL28922168 0.76 SIGMAR1 (0.47) TAAR1SIGMAR1SLC6A2SLC6A4SLC6A3
SCHEMBL1765955 0.76 TRPA1 (0.47) TAAR1SIGMAR1SLC6A2SLC6A4SLC6A3
SCHEMBL2488884 0.76 SLC6A2 (0.52) TAAR1SIGMAR1SLC6A2SLC6A4SLC6A3
SCHEMBL21271564 0.74 EPHX1 (0.43) TAAR1SIGMAR1SLC6A2SLC6A4SLC6A3
SCHEMBL6332012 0.74 TRPA1 (0.43) TAAR1SIGMAR1SLC6A2SLC6A4SLC6A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 158 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
CN-121586750-A Composition for forming silicon-containing underlayer film for directional self-assembly 日产化学株式会社 2026-02-27 CN disclosed
EP-4679175-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Corporation (JP) 2026-01-14 EP disclosed
US-20250377596-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 US disclosed
US-12493243-B2 Film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2025-12-09 US disclosed
US-20250362609-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250355357-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-11-20 US disclosed
US-20250348001-A1 METHOD FOR PRODUCING LAMINATE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT NISSAN CHEMICAL CORPORATION (JP) 2025-11-13 US disclosed
US-9290623-B2 Composition for forming silicon-containing resist underlayer film having cyclic diester group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-03-22 US disclosed
US-20150322212-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-11-12 US disclosed
US-20150316849-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ESTER GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-11-05 US disclosed
EP-2916170-A1 ESTER-GROUP-CONTAINING COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Industries, Ltd. (JP) 2015-09-09 EP disclosed
CN-104737076-A Ester-group-containing composition for forming silicon-containing resist underlayer film NISSAN CHEMICAL IND LTD 2015-06-24 CN disclosed
US-8877425-B2 Silicon-containing resist underlayer film forming composition having fluorine-based additive NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-11-04 US disclosed
US-8864894-B2 Resist underlayer film forming composition containing silicone having onium group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-10-21 US disclosed
US-20130224957-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING FLUORINE-BASED ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-08-29 US disclosed
EP-2336256-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM WITH ONIUM GROUP Nissan Chemical Industries, Ltd. (JP) 2011-06-22 EP disclosed
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-06-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150322212-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP ASH2L, SRRM2, CCNT1 TAAR1 4014/4885SIGMAR1 1111/4885SLC6A2 4767/4885
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 TAAR1 4473/4885SIGMAR1 1321/4885SLC6A2 4791/4885
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP SRR, KDM2B, MSR1 TAAR1 2448/4885SIGMAR1 666/4885SLC6A2 4552/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L TAAR1 1202/4885SIGMAR1 467/4885SLC6A2 4021/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.