SCHEMBL1991245

SCHEMBL1991245

CC(=CC1CC2CCC1CC2)C(=O)O

nearest known ligand 0.33

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.33
GABRA1 P14867 1/20 0.33
TSHR P16473 1/20 0.33
GABRG2 P18507 1/20 0.33
RXRA P19793 1/20 0.33
GABRB3 P28472 1/20 0.33
RXRB P28702 1/20 0.33
GABRB2 P47870 1/20 0.33
RXRG P48443 1/20 0.33
POLB P06746 1/20 0.33
ATM Q13315 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL158980 0.91 POLB (0.41) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL974353 0.77 ALDH1A1 (0.41) ALDH1A1TSHRPOLBATM
SCHEMBL32688585 0.77 POLB (0.42) ALDH1A1POLBATM
SCHEMBL15051868 0.73 ALDH1A1 (0.39) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL23877848 0.72 ALDH1A1 (0.31) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL6419264 0.72 NPC1 (0.34) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL32688801 0.72 POLB (0.42) ALDH1A1POLBATM
SCHEMBL6419262 0.72 NPC1 (0.34) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL15475559 0.72 POLB (0.42) ALDH1A1POLBATM
SCHEMBL503447 0.71 ALDH1A1 (0.41) ALDH1A1GABRA1TSHRGABRG2RXRA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11036133-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2021-06-15 US disclosed
US-20200124961-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2020-04-23 US disclosed
US-10082733-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2018-09-25 US disclosed
US-20170199453-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2017-07-13 US disclosed
US-9594303-B2 Resist pattern-forming method and photoresist composition JSR CORPORATION (JP) 2017-03-14 US disclosed
US-9500950-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2016-11-22 US disclosed
US-9329474-B2 Photoresist composition and resist pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160062237-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2016-03-03 US disclosed
US-9213236-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2015-12-15 US disclosed
US-9046765-B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-8697343-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2014-04-15 US disclosed
US-20140023968-A1 RESIST PATTERN-FORMING METHOD, RESIST PATTERN-FORMING RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM JSR CORPORATION (JP) 2014-01-23 US disclosed
US-20130280657-A1 PHOTORESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-10-24 US disclosed
US-20120258402-A1 PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2012-10-11 US disclosed
US-20120171612-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER JSR CORPORATION (JP) 2012-07-05 US disclosed
US-8084188-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2011-12-27 US disclosed
US-20110151378-A1 RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, POLYMER, AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2011-06-23 US disclosed
US-20100203447-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-08-12 US disclosed
US-20100068647-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-03-18 US disclosed
US-20090202945-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-08-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120258402-A1 PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND FRG1, NPY4R, RER1 ALDH1A1 2682/4885GABRA1 844/4885TSHR 2050/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.