SCHEMBL20616201

SCHEMBL20616201

C=C(C)c1ccc(C(C(F)(F)F)(C(F)(F)F)C(F)(F)F)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35
NR4A1 P22736 1/20 0.35
NR4A2 P43354 1/20 0.35
NR4A3 Q92570 1/20 0.35
CA2 P00918 1/20 0.34
PTGS1 P23219 2/20 0.33
NQO2 P16083 1/20 0.33
PTGS2 P35354 1/20 0.33
TRPV1 Q8NER1 1/20 0.33
TSHR P16473 1/20 0.33
NR1H2 P55055 2/20 0.33
NR1H3 Q13133 2/20 0.33
RORC P51449 1/20 0.33
GAA P10253 1/20 0.33
MAPT P10636 1/20 0.33
HSD17B10 Q99714 1/20 0.33
MLYCD O95822 2/20 0.32
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1474670 0.82 CES2 (0.54) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL86047 0.81 NR1H3 (0.53) NR1H2NR1H3MLYCDSMN1; SMN2
SCHEMBL26474236 0.81 TSHR (0.35) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL1476091 0.81 PDE2A (0.46) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL15582362 0.79 HSD11B1 (0.46)
SCHEMBL56361 0.75 MAPT (0.40) CES2CES1GAAMAPTHSD17B10
SCHEMBL11627251 0.75 TSHR (0.39) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL9471595 0.75 SLC2A1 (0.44) NR4A1NR4A2NR4A3TSHRMAPT
SCHEMBL11281234 0.75 ESR1 (0.43) TSHRMAPTHSD17B10ESR1ESR2
SCHEMBL465848 0.75 TSHR (0.52) TSHRMAPTSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11644752-B2 Polymer, positive resist composition, and method of forming resist pattern ZEON CORPORATION (JP) 2023-05-09 US disclosed
US-20220187708-A1 POLYMER AND POSITIVE RESIST COMPOSITION ZEON CORPORATION (JP) 2022-06-16 US disclosed
US-11215925-B2 Method of forming resist pattern ZEON CORPORATION (JP) 2022-01-04 US disclosed
US-20210397097-A1 METHOD OF PRODUCING MOLDED PRODUCT, RESIST FOR COLLECTIVE MOLDING WITH IMPRINT-ELECTRONIC LITHOGRAPHY, METHOD OF PRODUCING REPLICA MOLD, METHOD OF PRODUCING DEVICE, AND IMPRINT MATERIAL TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2021-12-23 US disclosed
US-20210072643-A1 METHOD OF FORMING RESIST PATTERN ZEON CORPORATION (JP) 2021-03-11 US disclosed
US-20210026244-A1 POSITIVE RESIST COMPOSITION FOR EUV LITHOGRAPHY AND METHOD OF FORMING RESIST PATTERN ZEON CORPORATION (JP) 2021-01-28 US disclosed
US-10809618-B2 Method of forming resist pattern ZEON CORPORATION (JP) 2020-10-20 US disclosed
US-20200257198-A1 POSITIVE RESIST COMPOSITION, RESIST FILM FORMATION METHOD, AND LAMINATE MANUFACTURING METHOD ZEON CORPORATION (JP) 2020-08-13 US disclosed
US-20200073240-A1 POLYMER, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN ZEON CORPORATION (JP) 2020-03-05 US disclosed
WO-2019151021-A1 METHOD FOR FORMING RESIST PATTERN 日本ゼオン株式会社 2019-08-08 WO disclosed
US-20190056664-A1 POLYMER, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN ZEON CORPORATION (JP) 2019-02-21 US disclosed
US-20190004425-A1 METHOD OF FORMING RESIST PATTERN ZEON CORPORATION (JP) 2019-01-03 US disclosed