Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NR1H3 | Q13133 | 13/20 | 0.53 |
| ▸ | NR1H2 | P55055 | 12/20 | 0.53 |
| ▸ | MLYCD | O95822 | 4/20 | 0.52 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.50 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15582362 | 0.82 | HSD11B1 (0.46) | — | |
| SCHEMBL20616201 | 0.81 | CES2 (0.35) | NR1H3NR1H2MLYCDSMN1; SMN2 | |
| SCHEMBL3702855 | 0.81 | NR1H3 (0.50) | NR1H3NR1H2MLYCD | |
| SCHEMBL1474670 | 0.80 | CES2 (0.54) | — | |
| SCHEMBL1476091 | 0.79 | PDE2A (0.46) | NR1H3NR1H2MLYCD | |
| SCHEMBL86347 | 0.79 | NR1H2 (0.39) | NR1H3NR1H2MLYCDSMN1; SMN2 | |
| SCHEMBL26474236 | 0.79 | TSHR (0.35) | NR1H3NR1H2MLYCD | |
| SCHEMBL13100303 | 0.79 | SMN1; SMN2 (0.59) | NR1H3NR1H2MLYCDSMN1; SMN2 | |
| SCHEMBL131990 | 0.79 | NR1H2 (0.68) | NR1H3NR1H2MLYCDSMN1; SMN2 | |
| SCHEMBL428959 | 0.78 | MLYCD (0.77) | NR1H3NR1H2MLYCDSMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-5250626-A | Miscible blends of polyphosphazenes and acidic functional polymers | EASTMAN KODAK COMPANY (US) | 1993-10-05 | — | — | US | claimed |
| US-20230213862-A1 | PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2023-07-06 | — | — | US | disclosed |
| US-9507262-B2 | Resist top-coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-29 | — | — | US | disclosed |
| US-9274428-B2 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-01 | — | — | US | disclosed |
| US-9201300-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-01 | — | — | US | disclosed |
| US-20150234274-A1 | RESIST TOP-COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-08-20 | — | — | US | disclosed |
| US-8951712-B2 | Resist protective film-forming composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-10 | — | — | US | disclosed |
| US-20150030983-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-01-29 | — | — | US | disclosed |
| US-20140178818-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140080064-A1 | RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |
| US-8129099-B2 | Double patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-06 | — | — | US | disclosed |
| US-20090208886-A1 | DOUBLE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-6794109-B2 | POLYMER CONTAINING A FLUORINATED STYRENE COPOLYMER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2004-09-21 | — | — | US | disclosed |
| US-20020160297-A1 | Low abosorbing resists for 157 nm lithography | AIR FORCE, UNITED STATES | 2002-10-31 | — | — | US | disclosed |
| WO-2002069043-A2 | LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-09-06 | — | — | WO | disclosed |